Presentation | 2005/6/2 Electronic structure analysis of high-k dielectric films by using TEM-EELS Nobuyuki IKRASHI, Kenzo MANABE, Kensuke TAKAHASHI, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | Electron energy-loss spectroscopy in a transmission electron microscope (TEM-EELS) can be applied in investigating band-gaps of dielectric materials at a nano-meter-scale spatial resolution. We used the method to analyze the band gaps of Hf silicate thin films, a candidate to replace the current SiO_2-based gate dielectric film in MOSFETs. We show how the chemical compositions of the silicate films determine their electronic structures and their dielectric nature. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | TEM-EELS / Energy-loss function / Hf silicate thin film / band gap / dielectric nature |
Paper # | SDM2005-63 |
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Committee | SDM |
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Conference Date | 2005/6/2(1days) |
Place (in Japanese) | (See Japanese page) |
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Topics (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Silicon Device and Materials (SDM) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Electronic structure analysis of high-k dielectric films by using TEM-EELS |
Sub Title (in English) | |
Keyword(1) | TEM-EELS |
Keyword(2) | Energy-loss function |
Keyword(3) | Hf silicate thin film |
Keyword(4) | band gap |
Keyword(5) | dielectric nature |
1st Author's Name | Nobuyuki IKRASHI |
1st Author's Affiliation | System Devices Research Laboratories, NEC Corporation() |
2nd Author's Name | Kenzo MANABE |
2nd Author's Affiliation | System Devices Research Laboratories, NEC Corporation |
3rd Author's Name | Kensuke TAKAHASHI |
3rd Author's Affiliation | System Devices Research Laboratories, NEC Corporation |
Date | 2005/6/2 |
Paper # | SDM2005-63 |
Volume (vol) | vol.105 |
Number (no) | 108 |
Page | pp.pp.- |
#Pages | 6 |
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