Presentation 2005/6/2
Electronic structure analysis of high-k dielectric films by using TEM-EELS
Nobuyuki IKRASHI, Kenzo MANABE, Kensuke TAKAHASHI,
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Abstract(in English) Electron energy-loss spectroscopy in a transmission electron microscope (TEM-EELS) can be applied in investigating band-gaps of dielectric materials at a nano-meter-scale spatial resolution. We used the method to analyze the band gaps of Hf silicate thin films, a candidate to replace the current SiO_2-based gate dielectric film in MOSFETs. We show how the chemical compositions of the silicate films determine their electronic structures and their dielectric nature.
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Keyword(in English) TEM-EELS / Energy-loss function / Hf silicate thin film / band gap / dielectric nature
Paper # SDM2005-63
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Committee SDM
Conference Date 2005/6/2(1days)
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Registration To Silicon Device and Materials (SDM)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Electronic structure analysis of high-k dielectric films by using TEM-EELS
Sub Title (in English)
Keyword(1) TEM-EELS
Keyword(2) Energy-loss function
Keyword(3) Hf silicate thin film
Keyword(4) band gap
Keyword(5) dielectric nature
1st Author's Name Nobuyuki IKRASHI
1st Author's Affiliation System Devices Research Laboratories, NEC Corporation()
2nd Author's Name Kenzo MANABE
2nd Author's Affiliation System Devices Research Laboratories, NEC Corporation
3rd Author's Name Kensuke TAKAHASHI
3rd Author's Affiliation System Devices Research Laboratories, NEC Corporation
Date 2005/6/2
Paper # SDM2005-63
Volume (vol) vol.105
Number (no) 108
Page pp.pp.-
#Pages 6
Date of Issue