| Presentation | 2005/3/4 Study on MFIS Structure Using SiO_2 Buffer Film with Nitrided Surface Masakazu HIRAKAWA, Minoru NODA, Masanori OKUYAMA, |
|---|---|
| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Surface of SiO_2 film with 7.5nm thickness has been nitrided by plasma treatment, aiming to make the SiO_2-based buffer layer in Metal-Ferroelectric-Insulator-Semiconductor (MFIS) structure as thin as possible and simultaneously to maintain good barrier properties between the ferroelectric thin film and buffer layer. XPS spectra of N peak shows the concentration of N atoms into SiO_2 layer nitrided by plasma treatment is distributed within depth of 1-2nm from the surface and decreases gradually from the surface. Leakage current density of MIS structure at ±3V is below 9x10^<-10>A/cm^2, showing a good barrier property as an insulator. C-V curve of MIS structure shows steep transition region, indicating excellent Si/SiO_2 interface properties. Memory window in C-V characteristic of MFIS structure using Sol-Gel-made SrBi_2Ta_2O_9(SBT) film is 0.7V. Finally, a very long retention time of 5x10^5sec (i.e. about 6 days) is obtained. Leakage current density of MFIS structure at hold voltage of 1.2V is as low as about 5x10^<-9>A/cm^2. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | MFIS structure / SrBi_2Ta_2O_9(SBT) / silicon oxide(SiO_2) / plasma nitridation / Sol-Gel method |
| Paper # | SDM2004-257 |
| Date of Issue |
| Conference Information | |
| Committee | SDM |
|---|---|
| Conference Date | 2005/3/4(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
|---|---|
| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Study on MFIS Structure Using SiO_2 Buffer Film with Nitrided Surface |
| Sub Title (in English) | |
| Keyword(1) | MFIS structure |
| Keyword(2) | SrBi_2Ta_2O_9(SBT) |
| Keyword(3) | silicon oxide(SiO_2) |
| Keyword(4) | plasma nitridation |
| Keyword(5) | Sol-Gel method |
| 1st Author's Name | Masakazu HIRAKAWA |
| 1st Author's Affiliation | Division of Advanced Electronics and Systems Innovation, Graduate School of Engineering Science, Osaka, University() |
| 2nd Author's Name | Minoru NODA |
| 2nd Author's Affiliation | Division of Advanced Electronics and Systems Innovation, Graduate School of Engineering Science, Osaka, University |
| 3rd Author's Name | Masanori OKUYAMA |
| 3rd Author's Affiliation | Division of Advanced Electronics and Systems Innovation, Graduate School of Engineering Science, Osaka, University |
| Date | 2005/3/4 |
| Paper # | SDM2004-257 |
| Volume (vol) | vol.104 |
| Number (no) | 713 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |