| Presentation | 2005/3/4 Preparation of PZT Thin Film Capacitor by MOCVD Method : Growth Stability and Dependency on Before and After Process Yutaka Nishioka, Masahiko Kajinuma, Takeshi Masuda, Isao Kimura, Shin Kikuchi, Takehito Jimbo, Masahisa Ueda, Mitsuhiro Endo, Yutaka Kokaze, Koukou Suu, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Mass production technology of Ferroelectric random access memory prepared by MOCVD method was studied. Uniformity of Ferroelectric property, growth stability and particle less were achieved for the control of substrate temperature uniformity and stability, and the control of gas heating, mixing and flow from precursor delivery system to scrubber system. Dependency on Top and Bottom electrode and Etching process were investigated, and the films have no damage and good property. The PZT thin films had excellent ferroelectric properties for mass production. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | MOCVD / PZT / FRAM / Ferroelectric Random Access Memory / Repeatability / Particle |
| Paper # | SDM2004-256 |
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| Conference Information | |
| Committee | SDM |
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| Conference Date | 2005/3/4(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Preparation of PZT Thin Film Capacitor by MOCVD Method : Growth Stability and Dependency on Before and After Process |
| Sub Title (in English) | |
| Keyword(1) | MOCVD |
| Keyword(2) | PZT |
| Keyword(3) | FRAM |
| Keyword(4) | Ferroelectric Random Access Memory |
| Keyword(5) | Repeatability |
| Keyword(6) | Particle |
| 1st Author's Name | Yutaka Nishioka |
| 1st Author's Affiliation | Institute for Semiconductor Technologies, ULVAC, Inc.() |
| 2nd Author's Name | Masahiko Kajinuma |
| 2nd Author's Affiliation | Institute for Semiconductor Technologies, ULVAC, Inc. |
| 3rd Author's Name | Takeshi Masuda |
| 3rd Author's Affiliation | Institute for Semiconductor Technologies, ULVAC, Inc. |
| 4th Author's Name | Isao Kimura |
| 4th Author's Affiliation | Institute for Semiconductor Technologies, ULVAC, Inc. |
| 5th Author's Name | Shin Kikuchi |
| 5th Author's Affiliation | Institute for Semiconductor Technologies, ULVAC, Inc. |
| 6th Author's Name | Takehito Jimbo |
| 6th Author's Affiliation | Institute for Semiconductor Technologies, ULVAC, Inc. |
| 7th Author's Name | Masahisa Ueda |
| 7th Author's Affiliation | Institute for Semiconductor Technologies, ULVAC, Inc. |
| 8th Author's Name | Mitsuhiro Endo |
| 8th Author's Affiliation | Institute for Semiconductor Technologies, ULVAC, Inc. |
| 9th Author's Name | Yutaka Kokaze |
| 9th Author's Affiliation | Institute for Semiconductor Technologies, ULVAC, Inc. |
| 10th Author's Name | Koukou Suu |
| 10th Author's Affiliation | Institute for Semiconductor Technologies, ULVAC, Inc. |
| Date | 2005/3/4 |
| Paper # | SDM2004-256 |
| Volume (vol) | vol.104 |
| Number (no) | 713 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |