| Presentation | 2005/3/4 Analysis on Enhanced Crystallization of Oxide Thin Films Caused by Prebaking under Reduced Oxygen Ambience Yoshihisa FUJISAKI, Hiroshi ISHIWARA, |
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| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | The ferroelectricity of sol-gel derived 80-nm Bi_<3.45>La_<0.75>Ti_3O_<12> (BLT) films was found to be significantly enhanced by low-pressure baking during the sol-gel process. The ferroelectricity enhancement was caused by the low-pressure baking after the drying process in air and before the crystallization of the dried gel. The maximum remanent polarization (Pr) was 27.2 μC/cm^2, which was achieved after baking at 1.3 kPa oxygen pressure. The coercive field of 54.3 kV/cm was also achieved at the same time. This Pr value is 2.3 times larger than the value attainable with the usual 1-atm baking process. The saturation property of the same capacitor proved that +/-1.2 V operation is possible. The crystal graphical analysis mainly on the structure of dried gels was carried out to investigate the mechanism of large ferroelectricity enhancements. As a result, the porous structure of the gel dried under the low pressure oxygen ambience is found to be attributable to this enhancements. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | BLT / ferroelectricity / sol-gel / low pressure baking |
| Paper # | SDM2004-255 |
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| Conference Information | |
| Committee | SDM |
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| Conference Date | 2005/3/4(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Analysis on Enhanced Crystallization of Oxide Thin Films Caused by Prebaking under Reduced Oxygen Ambience |
| Sub Title (in English) | |
| Keyword(1) | BLT |
| Keyword(2) | ferroelectricity |
| Keyword(3) | sol-gel |
| Keyword(4) | low pressure baking |
| 1st Author's Name | Yoshihisa FUJISAKI |
| 1st Author's Affiliation | Central Research Laboratory, Hitachi Ltd.() |
| 2nd Author's Name | Hiroshi ISHIWARA |
| 2nd Author's Affiliation | Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology |
| Date | 2005/3/4 |
| Paper # | SDM2004-255 |
| Volume (vol) | vol.104 |
| Number (no) | 713 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |