Presentation 2005/1/24
Metallization using Supercritical Carbon Dioxide Fluids
E. Kondoh,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) Ruthenium has been of interest in applying to ULSI capacitor electrodes and more recently as a barrier metal against Cu diffusion. Thin film deposition from supercritical CO_2 has gained particular attention as a new deposition technique that provides nano penetration capability and a possibility of developing new deposition chemistries. In this article, deposition characteristics of Ru thin films using H_2 reduction chemistry were described first. It was found that Ru films grow only on conductive surfaces when the H_2 reduction chemistry was employed. This phenomenon can be beneficial for some specific applications, however is not very much favored as a general deposition technology. Secondary this paper reports our finding that Ru films, oxygen-containing Ru films in fact, grew on dielectric/non-conductive surfaces when oxidative chemistry was used instead. O_3 was used as an oxidant for thin film deposition from supercritical fluids for the first time. The use of O_3 promotes heterogenous nucleation and increases the amount of oxygen in the films. The oxygen-containing Ru was reduced by another reduction run using supercritical CO_2. Finally, by using the oxygen-containing Ru layer as a seed layer for Cu deposition, it was succeeded to fabricate Cu/Ru/dielectric stacked structures.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Ru thin films / Supercritical Fluid / Interconnects / Ozone
Paper # SDM2004-244
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Conference Information
Committee SDM
Conference Date 2005/1/24(1days)
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Paper Information
Registration To Silicon Device and Materials (SDM)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Metallization using Supercritical Carbon Dioxide Fluids
Sub Title (in English)
Keyword(1) Ru thin films
Keyword(2) Supercritical Fluid
Keyword(3) Interconnects
Keyword(4) Ozone
1st Author's Name E. Kondoh
1st Author's Affiliation University of Yamanashi()
Date 2005/1/24
Paper # SDM2004-244
Volume (vol) vol.104
Number (no) 645
Page pp.pp.-
#Pages 4
Date of Issue