| Presentation | 2005/1/24 Strategy for Highly-Reliable Porous Low-k Films : Mechanism of Time-Dependent Dielectric-Constant Increase (TDDI) Daisuke RYUZAKI, Haruaki SAKURAI, Koichi ABE, Kenichi TAKEDA, Hiroshi FUKUDA, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | The mechanism of the dielectric-constant increase in porous organosilicate glasses (OSGs) under electric-field stress has been revealed for the first time, where the dielectric-constant increase is caused by the oxidation of methyl groups in porous OSGs. By optimizing the methyl content, the authors developed a highly reliable, novel low-k porous OSG (k=2.3) with a dielectric-constant lifetime of 10^3 years for the 65-nm generation and beyond. The newly developed porous OSG was successfully integrated into 240-nm-pitch copper interconnects, where the line-to-line capacitance shows a much longer lifetime than the case of conventional porous OSGs. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Low-k / TDDI / Dielectric constant / Lifetime / Reliability |
| Paper # | SDM2004-239 |
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| Conference Information | |
| Committee | SDM |
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| Conference Date | 2005/1/24(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
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| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | ENG |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Strategy for Highly-Reliable Porous Low-k Films : Mechanism of Time-Dependent Dielectric-Constant Increase (TDDI) |
| Sub Title (in English) | |
| Keyword(1) | Low-k |
| Keyword(2) | TDDI |
| Keyword(3) | Dielectric constant |
| Keyword(4) | Lifetime |
| Keyword(5) | Reliability |
| 1st Author's Name | Daisuke RYUZAKI |
| 1st Author's Affiliation | Central Research Laboratory, Hitachi, Ltd.() |
| 2nd Author's Name | Haruaki SAKURAI |
| 2nd Author's Affiliation | Semiconductor Materials Business Unit, Hitachi Chemical Co., Ltd. |
| 3rd Author's Name | Koichi ABE |
| 3rd Author's Affiliation | Semiconductor Materials Business Unit, Hitachi Chemical Co., Ltd. |
| 4th Author's Name | Kenichi TAKEDA |
| 4th Author's Affiliation | Central Research Laboratory, Hitachi, Ltd. |
| 5th Author's Name | Hiroshi FUKUDA |
| 5th Author's Affiliation | Central Research Laboratory, Hitachi, Ltd. |
| Date | 2005/1/24 |
| Paper # | SDM2004-239 |
| Volume (vol) | vol.104 |
| Number (no) | 645 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |