| Presentation | 2005/1/24 Application of Electro-Chemical Polishing in DI water to Cu damascene wiring planarization process Ikutarou Noji, Itsuki Kobata, Hozumi Yasuda, Takeshi Iizumi, Masayuki Kumekawa, Yutaka Wada, Akira Fukunaga, Manabu Tsujimura, Yasushi Toma, Tsukuru Suzuki, Takayuki Saitoh, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Integrating a Low-K material into the Cu damascene wiring planarization process will require further improvements in planarization, including the resolution of problems involving material breakdown and peeling during polishing arising from the relative weakness of these materials. As a solution, we are developing Electro-Chemical Polishing in DI water (ECP-DI). ECP-DI involves removing material through the electrochemical interaction of OH^- ions in DI water and the surface atoms of a material to be processed. Since this processing method is based on electrochemical reactions, the surface of a material can be processed without mechanical damage. Using an ion exchanger as a dissociation catalyst and our own electrode, we confirmed that ECP-DI offers the following advantages over conventional CMP or conventional ECP when applied to the Cu damascene wiring planarization process : -Permits low processing pressures for reduced wafer damage, since removal rate is independent of processing pressure. Removal rate can be controlled by current density. -Enables superior planarization processing (capacity to detect differences in levels), a weakness of conventional ECP. -Lower operating costs, since no slurry or chemical is used. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | planarization process / electro-chemical polishing / DI water / low processing pressure |
| Paper # | SDM2004-237 |
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| Conference Information | |
| Committee | SDM |
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| Conference Date | 2005/1/24(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Application of Electro-Chemical Polishing in DI water to Cu damascene wiring planarization process |
| Sub Title (in English) | |
| Keyword(1) | planarization process |
| Keyword(2) | electro-chemical polishing |
| Keyword(3) | DI water |
| Keyword(4) | low processing pressure |
| 1st Author's Name | Ikutarou Noji |
| 1st Author's Affiliation | Ebara Corporation() |
| 2nd Author's Name | Itsuki Kobata |
| 2nd Author's Affiliation | Ebara Corporation |
| 3rd Author's Name | Hozumi Yasuda |
| 3rd Author's Affiliation | Ebara Corporation |
| 4th Author's Name | Takeshi Iizumi |
| 4th Author's Affiliation | Ebara Corporation |
| 5th Author's Name | Masayuki Kumekawa |
| 5th Author's Affiliation | Ebara Corporation |
| 6th Author's Name | Yutaka Wada |
| 6th Author's Affiliation | Ebara Corporation |
| 7th Author's Name | Akira Fukunaga |
| 7th Author's Affiliation | Ebara Corporation |
| 8th Author's Name | Manabu Tsujimura |
| 8th Author's Affiliation | Ebara Corporation |
| 9th Author's Name | Yasushi Toma |
| 9th Author's Affiliation | Ebara Research Co. Ltd. |
| 10th Author's Name | Tsukuru Suzuki |
| 10th Author's Affiliation | Ebara Research Co. Ltd. |
| 11th Author's Name | Takayuki Saitoh |
| 11th Author's Affiliation | Ebara Research Co. Ltd. |
| Date | 2005/1/24 |
| Paper # | SDM2004-237 |
| Volume (vol) | vol.104 |
| Number (no) | 645 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |