Presentation 2004/12/9
Degradation of Low Temperature Poly-Si TFTs by Joule Heating
Koji Kitajima, Yuta Sugawara, Hiroshi Yano, Tomoaki Hatayama, Yukiharu Uraoka, Takashi Fuyuki, Shinichiro Hashimoto, Yukihiro Morita,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) We analyzed thermal degradation in low temperature poly-S_1 thin film transistors using infrared thermal imaging microscope. Non-uniform distribution was observed in saturation region along the gate length Increase of temperature was remarkable in wide gate width, therefore large voltage shift was observed TFTs with different source and drain wiring indicated different temperature increase, subsequently, different reliability was confirmed Universal relationship was obtained independent of crystallinity of poly-S_1. This curve suggested that we should take the degradation of gate oxide such as electron traps into account In order to realize the future display, this method will be very effective to improve the reliability
Keyword(in Japanese) (See Japanese page)
Keyword(in English) low temperature poly-S_1 / Joule Heating / Vth shift / infrared thermal imaging scope
Paper # SDM2004-204
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Committee SDM
Conference Date 2004/12/9(1days)
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Registration To Silicon Device and Materials (SDM)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Degradation of Low Temperature Poly-Si TFTs by Joule Heating
Sub Title (in English)
Keyword(1) low temperature poly-S_1
Keyword(2) Joule Heating
Keyword(3) Vth shift
Keyword(4) infrared thermal imaging scope
1st Author's Name Koji Kitajima
1st Author's Affiliation Nara Institute of Science and Technology()
2nd Author's Name Yuta Sugawara
2nd Author's Affiliation Nara Institute of Science and Technology
3rd Author's Name Hiroshi Yano
3rd Author's Affiliation Nara Institute of Science and Technology
4th Author's Name Tomoaki Hatayama
4th Author's Affiliation Nara Institute of Science and Technology
5th Author's Name Yukiharu Uraoka
5th Author's Affiliation Nara Institute of Science and Technology
6th Author's Name Takashi Fuyuki
6th Author's Affiliation Nara Institute of Science and Technology
7th Author's Name Shinichiro Hashimoto
7th Author's Affiliation Matsushita Electric Ind Co.Ltd
8th Author's Name Yukihiro Morita
8th Author's Affiliation Matsushita Electric Ind Co.Ltd
Date 2004/12/9
Paper # SDM2004-204
Volume (vol) vol.104
Number (no) 510
Page pp.pp.-
#Pages 6
Date of Issue