| Presentation | 2004/12/9 Fabrication of Short-Channel 4H-SiC MOSFETs and Theoretical Analysis of Short-Channel Effects Masato NOBORIO, Yosuke KANZAKI, Jun SUDA, Tsunenobu KIMOTO, Hiroyuki MATSUNAMI, |
|---|---|
| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | In this paper, short-channel effects in 4H-SiC MOSFETs have been investigated. Planar MOSFETs with various channel lengths have been fabricated on 4H-SiC (0001), (000-1) and (11-20) faces. In the fabricated MOSFETs, short-channel effects such as punchthrough behavior occur by reducing channel length. The critical channel lengths below which short-channel effects occur are also analyzed as a function of p-body doping and oxide thickness. The critical channel lengths in the fabricated MOSFETs are slightly longer than those obtained from the device simulation and the empirical relationship for Si MOSFETs. The dependencies of crystal face orientation for short-channel effects are hardly observed. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | silicon carbide / MOSFET / device simulation / short-channel effect |
| Paper # | SDM2004-192 |
| Date of Issue |
| Conference Information | |
| Committee | SDM |
|---|---|
| Conference Date | 2004/12/9(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
|---|---|
| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Fabrication of Short-Channel 4H-SiC MOSFETs and Theoretical Analysis of Short-Channel Effects |
| Sub Title (in English) | |
| Keyword(1) | silicon carbide |
| Keyword(2) | MOSFET |
| Keyword(3) | device simulation |
| Keyword(4) | short-channel effect |
| 1st Author's Name | Masato NOBORIO |
| 1st Author's Affiliation | Department of Electronic Science and Engineering, Kyoto University() |
| 2nd Author's Name | Yosuke KANZAKI |
| 2nd Author's Affiliation | Department of Electronic Science and Engineering, Kyoto University |
| 3rd Author's Name | Jun SUDA |
| 3rd Author's Affiliation | Department of Electronic Science and Engineering, Kyoto University |
| 4th Author's Name | Tsunenobu KIMOTO |
| 4th Author's Affiliation | Department of Electronic Science and Engineering, Kyoto University |
| 5th Author's Name | Hiroyuki MATSUNAMI |
| 5th Author's Affiliation | Innovation Plaza Kyoto, JST |
| Date | 2004/12/9 |
| Paper # | SDM2004-192 |
| Volume (vol) | vol.104 |
| Number (no) | 510 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |