| Presentation | 2004/11/5 Control of metal-semiconductor and insulator-semiconductor interfaces in nitride electron devices Tamotsu Hashizume, Junji Kotani, Hideki Hasegawa, |
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| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | This paper discusses mechanism of excess leakage currents through GaN and AlGaN Schottky interfaces and surface passivation structures for GaN-based electron devices. The I-V-T experiments were compared to the calculations based on the thin surface barrier (TSB) model that the effects of surface defects were taken into account. Our simulation results indicated that the barrier thinning caused by unintentionally introduced surface defect donors could enhance the tunneling transport processes, leading to large leakage currents through GaN and AlGaN Schottky interfaces. The XPS analysis showed serious deterioration such as stoichiometry disorder and N-deficiency at the AlGaN surfaces processed by high-temperature annealing, H_2-plasma cleaning, dry etching in CH_4/H_2/Ar plasma and deposition of SiO_2. The N-deficiency could introduce a localized deep donor level related to N vacancy near AlGaN surface. An Al_2O_3-based surface passivation scheme including the N_2-plasma surface treatment was proposed and applied to an insulated-gate type AlGaN/GaN HFET. A large conduction-band offset of 2.1 eV was achieved at the Al_2O_3/Al_<0.3>Ga_<0.7>N interface. No current collapse was observed in the fabricated Al_2O_3 insulated-gate HFETs under both drain stress and gate stress. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | GaN / AlGaN / Schottky / leakage current / HFET / surface / nitrogen vacancy / surface states / current collapse |
| Paper # | R2004-43,ED2004-156 |
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| Conference Information | |
| Committee | R |
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| Conference Date | 2004/11/5(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Reliability(R) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Control of metal-semiconductor and insulator-semiconductor interfaces in nitride electron devices |
| Sub Title (in English) | |
| Keyword(1) | GaN |
| Keyword(2) | AlGaN |
| Keyword(3) | Schottky |
| Keyword(4) | leakage current |
| Keyword(5) | HFET |
| Keyword(6) | surface |
| Keyword(7) | nitrogen vacancy |
| Keyword(8) | surface states |
| Keyword(9) | current collapse |
| 1st Author's Name | Tamotsu Hashizume |
| 1st Author's Affiliation | Research Center for Integrated Quantum Electronics, Hokkaido University() |
| 2nd Author's Name | Junji Kotani |
| 2nd Author's Affiliation | Research Center for Integrated Quantum Electronics, Hokkaido University |
| 3rd Author's Name | Hideki Hasegawa |
| 3rd Author's Affiliation | Research Center for Integrated Quantum Electronics, Hokkaido University |
| Date | 2004/11/5 |
| Paper # | R2004-43,ED2004-156 |
| Volume (vol) | vol.104 |
| Number (no) | 427 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |