| Presentation | 2005-01-18 Al_2O_3/Si_3N_4 Insulated-Gate AlGaN/GaN Heterostructure Field-Effect Transistors with Regrown Ohmic Structure Narihiko MAEDA, Chengxin WANG, Takashi MAKIMURA, Masanobu HIROKI, Toshiki MAKIMOTO, Takashi KOBAYASHI, Takatomo ENOKI, |
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| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We report on device characteristics of AlGaN/GaN MIS HFETs with an Al_2O_3/Si_3N_4 bi-layer gate insulator. Attractive characteristics have been obtained, i.e., the gate leakage current was reduced by three to five orders of magnitude compared with that of normal HFETs, and the reduction in g_m was small which is induced by the insertion of a gate insulator. We fabricated a 0.1 μm gate-length channel-doped MIS HFET where a regrown ohmic structure was also incorporated. As the result of the regrown ohmic structure, the ohmic contact resistance was reduced from 0.7 to 0.3 mmΩ. In addition to the reduced gate leakage current, a high drain current of 1.2 A/mm and a high g_m of 280 mS/mm have been obtained. This is the highest g_m value ever reported in the category of MIS HFETs. The f_T and f_ |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | GaN / HFET / Al_2O_3/Si_3N_4 gate insulator / MIS Structure / doped-channel |
| Paper # | ED2004-213,MW2004-220 |
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| Conference Information | |
| Committee | MW |
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| Conference Date | 2005/1/11(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Microwaves (MW) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Al_2O_3/Si_3N_4 Insulated-Gate AlGaN/GaN Heterostructure Field-Effect Transistors with Regrown Ohmic Structure |
| Sub Title (in English) | |
| Keyword(1) | GaN |
| Keyword(2) | HFET |
| Keyword(3) | Al_2O_3/Si_3N_4 gate insulator |
| Keyword(4) | MIS Structure |
| Keyword(5) | doped-channel |
| 1st Author's Name | Narihiko MAEDA |
| 1st Author's Affiliation | NTT Photonics Laboratories() |
| 2nd Author's Name | Chengxin WANG |
| 2nd Author's Affiliation | NTT Photonics Laboratories |
| 3rd Author's Name | Takashi MAKIMURA |
| 3rd Author's Affiliation | NTT Photonics Laboratories |
| 4th Author's Name | Masanobu HIROKI |
| 4th Author's Affiliation | NTT Photonics Laboratories |
| 5th Author's Name | Toshiki MAKIMOTO |
| 5th Author's Affiliation | NTT Basic Research Laboratories |
| 6th Author's Name | Takashi KOBAYASHI |
| 6th Author's Affiliation | NTT Photonics Laboratories |
| 7th Author's Name | Takatomo ENOKI |
| 7th Author's Affiliation | NTT Photonics Laboratories |
| Date | 2005-01-18 |
| Paper # | ED2004-213,MW2004-220 |
| Volume (vol) | vol.104 |
| Number (no) | 552 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |