| Presentation | 2005-06-28 High Driving Capability by Lateral Unified CBiCMOS Inverter with Resistor-Ratio Type Control Circuits Takashi Hamahata, Toshiro Akino, |
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| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We proposed a new operation mode for a partially depleted CMOS inverter with a deep diffusion length xj on SOI, and have designed and simulated a hybrid lateral BJT-CMOS inverter circuit. The scheme utilizes the gated complementary lateral npn and pnp BJT inherent of n and p channel MOSFET. Forward current is applied to the base terminal of the channel MOSFETs, from pull-up or pull-down MOSFET having normal substrates as current sources, where each drain terminal is connected to the corresponding base terminal of the inverter. We called this hybrid device as a new Unified (U)-CBiCMOS inverter. A logic scheme is also proposed to control the gates of the pull-up or pull-down MOSFETs in switching states using output signals made from two normal substrate CMOS inverters with two kind of resistance ratios. In this paper, we designed the U-CBiCMOS inverter with the nearly same current capabilities for two complementary BJTs having the same area factor related to channel widths. Circuit simulation is based on 0.35μm BSIM3v3 model parameters for MOSFETs and a current gain 100 for BJTs. We set up a supply voltage as 0.7V that is the minimum activation voltage between the base and emitter of BJTs. We also set up a load capacity as 0.2361pF that is 64 times bigger than the gate capacitance of the minimum size inverter. It is shown that this U-CBiCMOS inverter has 41% faster speed and 20% less energy than 3 stage static CMOS inverter. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | SOI / partially depleted / CMOS / BJT / MOSFET / CBiCMOS / Unified (U)-CBiCMOS |
| Paper # | CAS2005-23,VLD2005-34,SIP2005-47 |
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| Conference Information | |
| Committee | CAS |
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| Conference Date | 2005/6/21(1days) |
| Place (in Japanese) | (See Japanese page) |
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| Topics (in Japanese) | (See Japanese page) |
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| Registration To | Circuits and Systems (CAS) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | High Driving Capability by Lateral Unified CBiCMOS Inverter with Resistor-Ratio Type Control Circuits |
| Sub Title (in English) | |
| Keyword(1) | SOI |
| Keyword(2) | partially depleted |
| Keyword(3) | CMOS |
| Keyword(4) | BJT |
| Keyword(5) | MOSFET |
| Keyword(6) | CBiCMOS |
| Keyword(7) | Unified (U)-CBiCMOS |
| 1st Author's Name | Takashi Hamahata |
| 1st Author's Affiliation | Program in Electronic System and Information Engineering, The Graduate School of Biology-Oriented Science and Technology, Kinki University() |
| 2nd Author's Name | Toshiro Akino |
| 2nd Author's Affiliation | Program in Electronic System and Information Engineering, The Graduate School of Biology-Oriented Science and Technology, Kinki University |
| Date | 2005-06-28 |
| Paper # | CAS2005-23,VLD2005-34,SIP2005-47 |
| Volume (vol) | vol.105 |
| Number (no) | 146 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |