Presentation 2004/10/1
The read-head sensor of semiconductor using magnetoresistance effect
Hiroki TAKAYAMA, Takashi KOMINE, Ryuji SUGITA, Tetsuo MURANOI,
PDF Download Page PDF download Page Link
Abstract(in Japanese) (See Japanese page)
Abstract(in English) We investigate the magnetoresistance for the magnetoresistive element, which consists of non-magnetic semiconductor, four electrodes and Au shunt, with varying location of voltage electrodes. The optimum location of voltage electrodes is estimated from MR ratios calculated by using finite element method. The MR ratio of 6.9 %, which is obtained at applied magnetic field of 0.005T for MR element with the asymmetrical voltage electrodes of the distance of 25 nm, is higher than that for the MR element with the symmetrical electrodes. In order to improve MR ratio at a low applied field, the flux guide type of MR element is proposed. The MR ratio of 138 % at an applied field of 0.005T is obtained for the flux guide type ele- ment with the asymmetrical electrodes.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) MR(magnetoresistance) element / semiconductor / flux guide
Paper # MR2004-16
Date of Issue

Conference Information
Committee MR
Conference Date 2004/10/1(1days)
Place (in Japanese) (See Japanese page)
Place (in English)
Topics (in Japanese) (See Japanese page)
Topics (in English)
Chair
Vice Chair
Secretary
Assistant

Paper Information
Registration To Magnetic Recording (MR)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) The read-head sensor of semiconductor using magnetoresistance effect
Sub Title (in English)
Keyword(1) MR(magnetoresistance) element
Keyword(2) semiconductor
Keyword(3) flux guide
1st Author's Name Hiroki TAKAYAMA
1st Author's Affiliation Faculty of engineering, Ibaraki University()
2nd Author's Name Takashi KOMINE
2nd Author's Affiliation Faculty of engineering, Ibaraki University
3rd Author's Name Ryuji SUGITA
3rd Author's Affiliation Faculty of engineering, Ibaraki University
4th Author's Name Tetsuo MURANOI
4th Author's Affiliation Faculty of engineering, Ibaraki University
Date 2004/10/1
Paper # MR2004-16
Volume (vol) vol.104
Number (no) 331
Page pp.pp.-
#Pages 5
Date of Issue