| Presentation | 2005/5/20 Dependence of Optical Properties of InN on Its Crystalline Quality Hiroyuki NAOI, Masahito KUROUCHI, Tsutomu ARAKI, Tomohiro YAMAGUCHI, Yasushi NANISHI, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | InN films of various qualities prepared by radio-frequency plasma-assisted molecular-beam epitaxy (RF-MBE) were investigated in detail in order to estimate the true bandgap energy of InN. Correlation among photoluminescence (PL) peak energy, carrier concentration, electron mobility, PL intensity, PL line width, and X-ray rocking curve (XRC) line width showed that the InN sample with the smallest PL peak energy of～0.67eV (at room temperature) had the highest electron mobility, the strongest PL intensity even with the smallest electron concentration, the sharpest PL and (0002) XRC peaks. Dependence of PL peak energy on carrier concentration can be explained mostly by the Burstein-Moss shift. Temperature dependence of PL peak energy was normal with smaller values at higher temperatures. These experimental results suggest that the PL should originate from fundamental inter-band transitions and not likely from mid-gap levels associated with crystal defects. The true bandgap energy of InN should be less than 0.67eV and probably around 0.65eV at room temperature. This assessment was further supported by In-composition dependence of PL peak and absorption edge energies for In-rich In_xGa_<1-x>N films. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | InN / In_xGa_<1-x>N / Bandgap Energy / Optical Properties / Electrical Properties / Crystalline Quality |
| Paper # | ED2005-42,CPM2005-34,SDM2005-42 |
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| Conference Information | |
| Committee | ED |
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| Conference Date | 2005/5/20(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Dependence of Optical Properties of InN on Its Crystalline Quality |
| Sub Title (in English) | |
| Keyword(1) | InN |
| Keyword(2) | In_xGa_<1-x>N |
| Keyword(3) | Bandgap Energy |
| Keyword(4) | Optical Properties |
| Keyword(5) | Electrical Properties |
| Keyword(6) | Crystalline Quality |
| 1st Author's Name | Hiroyuki NAOI |
| 1st Author's Affiliation | Center for Promotion of the COE Program, Ritsumeikan University() |
| 2nd Author's Name | Masahito KUROUCHI |
| 2nd Author's Affiliation | Department of Photonics, Faculty of Science and Engineering, Ritsumeikan University |
| 3rd Author's Name | Tsutomu ARAKI |
| 3rd Author's Affiliation | Department of Photonics, Faculty of Science and Engineering, Ritsumeikan University |
| 4th Author's Name | Tomohiro YAMAGUCHI |
| 4th Author's Affiliation | Department of Photonics, Faculty of Science and Engineering, Ritsumeikan University |
| 5th Author's Name | Yasushi NANISHI |
| 5th Author's Affiliation | Department of Photonics, Faculty of Science and Engineering, Ritsumeikan University |
| Date | 2005/5/20 |
| Paper # | ED2005-42,CPM2005-34,SDM2005-42 |
| Volume (vol) | vol.105 |
| Number (no) | 90 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |