Presentation | 2005/5/20 ELO of AlN on patterned sapphire substrates G. Narita, N. Fujimoto, Y. Hirose, T. Kitano, T. Kawashima, K. Iida, M. Tsuda, K. Balakrishnan, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki, |
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PDF Download Page | PDF download Page Link |
Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | Epitaxial lateral overgrowth technique, which is well known for the growth of low dislocation density GaN, was applied to grow AlN by MOVPE. Low-dislocation density AlN can be grown on the sapphire substrate by optimizing growth conditions, especially the growth temperature. RMS value of less than 0.1nm was realized. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | AlN / Sapphire / ELO |
Paper # | ED2005-36,CPM2005-28,SDM2005-36 |
Date of Issue |
Conference Information | |
Committee | ED |
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Conference Date | 2005/5/20(1days) |
Place (in Japanese) | (See Japanese page) |
Place (in English) | |
Topics (in Japanese) | (See Japanese page) |
Topics (in English) | |
Chair | |
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Paper Information | |
Registration To | Electron Devices (ED) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | ELO of AlN on patterned sapphire substrates |
Sub Title (in English) | |
Keyword(1) | AlN |
Keyword(2) | Sapphire |
Keyword(3) | ELO |
1st Author's Name | G. Narita |
1st Author's Affiliation | Faculty of Science and Technology, Meijo University, 21^ |
2nd Author's Name | N. Fujimoto |
2nd Author's Affiliation | Faculty of Science and Technology, Meijo University, 21^ |
3rd Author's Name | Y. Hirose |
3rd Author's Affiliation | Faculty of Science and Technology, Meijo University, 21^ |
4th Author's Name | T. Kitano |
4th Author's Affiliation | Faculty of Science and Technology, Meijo University, 21^ |
5th Author's Name | T. Kawashima |
5th Author's Affiliation | Faculty of Science and Technology, Meijo University, 21^ |
6th Author's Name | K. Iida |
6th Author's Affiliation | Faculty of Science and Technology, Meijo University, 21^ |
7th Author's Name | M. Tsuda |
7th Author's Affiliation | Faculty of Science and Technology, Meijo University, 21^ |
8th Author's Name | K. Balakrishnan |
8th Author's Affiliation | Faculty of Science and Technology, Meijo University, 21^ |
9th Author's Name | M. Iwaya |
9th Author's Affiliation | Faculty of Science and Technology, Meijo University, 21^ |
10th Author's Name | S. Kamiyama |
10th Author's Affiliation | Faculty of Science and Technology, Meijo University, 21^ |
11th Author's Name | H. Amano |
11th Author's Affiliation | Faculty of Science and Technology, Meijo University, 21^ |
12th Author's Name | I. Akasaki |
12th Author's Affiliation | Faculty of Science and Technology, Meijo University, 21^ |
Date | 2005/5/20 |
Paper # | ED2005-36,CPM2005-28,SDM2005-36 |
Volume (vol) | vol.105 |
Number (no) | 90 |
Page | pp.pp.- |
#Pages | 5 |
Date of Issue |