Presentation 2005/5/20
ELO of AlN on patterned sapphire substrates
G. Narita, N. Fujimoto, Y. Hirose, T. Kitano, T. Kawashima, K. Iida, M. Tsuda, K. Balakrishnan, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki,
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Abstract(in English) Epitaxial lateral overgrowth technique, which is well known for the growth of low dislocation density GaN, was applied to grow AlN by MOVPE. Low-dislocation density AlN can be grown on the sapphire substrate by optimizing growth conditions, especially the growth temperature. RMS value of less than 0.1nm was realized.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) AlN / Sapphire / ELO
Paper # ED2005-36,CPM2005-28,SDM2005-36
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Committee ED
Conference Date 2005/5/20(1days)
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Registration To Electron Devices (ED)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) ELO of AlN on patterned sapphire substrates
Sub Title (in English)
Keyword(1) AlN
Keyword(2) Sapphire
Keyword(3) ELO
1st Author's Name G. Narita
1st Author's Affiliation Faculty of Science and Technology, Meijo University, 21^ century COE "Nano-Factory", Meijo University()
2nd Author's Name N. Fujimoto
2nd Author's Affiliation Faculty of Science and Technology, Meijo University, 21^ century COE "Nano-Factory", Meijo University
3rd Author's Name Y. Hirose
3rd Author's Affiliation Faculty of Science and Technology, Meijo University, 21^ century COE "Nano-Factory", Meijo University
4th Author's Name T. Kitano
4th Author's Affiliation Faculty of Science and Technology, Meijo University, 21^ century COE "Nano-Factory", Meijo University
5th Author's Name T. Kawashima
5th Author's Affiliation Faculty of Science and Technology, Meijo University, 21^ century COE "Nano-Factory", Meijo University
6th Author's Name K. Iida
6th Author's Affiliation Faculty of Science and Technology, Meijo University, 21^ century COE "Nano-Factory", Meijo University
7th Author's Name M. Tsuda
7th Author's Affiliation Faculty of Science and Technology, Meijo University, 21^ century COE "Nano-Factory", Meijo University:Single Crystal Division, Kyocera Corporation
8th Author's Name K. Balakrishnan
8th Author's Affiliation Faculty of Science and Technology, Meijo University, 21^ century COE "Nano-Factory", Meijo University
9th Author's Name M. Iwaya
9th Author's Affiliation Faculty of Science and Technology, Meijo University, 21^ century COE "Nano-Factory", Meijo University
10th Author's Name S. Kamiyama
10th Author's Affiliation Faculty of Science and Technology, Meijo University, 21^ century COE "Nano-Factory", Meijo University
11th Author's Name H. Amano
11th Author's Affiliation Faculty of Science and Technology, Meijo University, 21^ century COE "Nano-Factory", Meijo University
12th Author's Name I. Akasaki
12th Author's Affiliation Faculty of Science and Technology, Meijo University, 21^ century COE "Nano-Factory", Meijo University
Date 2005/5/20
Paper # ED2005-36,CPM2005-28,SDM2005-36
Volume (vol) vol.105
Number (no) 90
Page pp.pp.-
#Pages 5
Date of Issue