| Presentation | 2005/6/23 Fabrication and characterization of a in-plane gate single electron tunneling transistor(Quantum Devices) S. H. Son, Y. S. Choi, K. H. Cho, Y. J. Park, J. I. Lee, Y. S. Yu, S. W. Hwang, D. Ahn, |
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| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We report the fabrication and characterization of two different in-plane-gate transistors made from a GaAs/AlGaAs two-dimensional electron system. The first transistor is depletion mode and the second one is enhancement mode. These two modes are distinguished by the fabricated channel width. Transport measurements at room temperature (T) of these devices show the characteristics of depletion and enhancement mode of a field effect transistor. The drain current-gate bias (I_ |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | In-plane gate transistor / single electron tunneling |
| Paper # | ED2005-106,SDM2005-126 |
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| Conference Information | |
| Committee | ED |
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| Conference Date | 2005/6/23(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | ENG |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Fabrication and characterization of a in-plane gate single electron tunneling transistor(Quantum Devices) |
| Sub Title (in English) | |
| Keyword(1) | In-plane gate transistor |
| Keyword(2) | single electron tunneling |
| 1st Author's Name | S. H. Son |
| 1st Author's Affiliation | Dept. of Electronics & Computer Engineering, Korea University:Nano Device Research Center, Korea Institute of Science and Technology:Institute of Quantum Information Processing and Systems, University of Seoul() |
| 2nd Author's Name | Y. S. Choi |
| 2nd Author's Affiliation | Dept. of Electronics & Computer Engineering, Korea University:Nano Device Research Center, Korea Institute of Science and Technology |
| 3rd Author's Name | K. H. Cho |
| 3rd Author's Affiliation | Dept. of Electronics & Computer Engineering, Korea University:Institute of Quantum Information Processing and Systems, University of Seoul |
| 4th Author's Name | Y. J. Park |
| 4th Author's Affiliation | Nano Device Research Center, Korea Institute of Science and Technology |
| 5th Author's Name | J. I. Lee |
| 5th Author's Affiliation | Nano Device Research Center, Korea Institute of Science and Technology |
| 6th Author's Name | Y. S. Yu |
| 6th Author's Affiliation | Dept. of Information & Control Eng., Hankyong National University |
| 7th Author's Name | S. W. Hwang |
| 7th Author's Affiliation | Dept. of Electronics & Computer Engineering, Korea University:Institute of Quantum Information Processing and Systems, University of Seoul |
| 8th Author's Name | D. Ahn |
| 8th Author's Affiliation | Institute of Quantum Information Processing and Systems, University of Seoul |
| Date | 2005/6/23 |
| Paper # | ED2005-106,SDM2005-126 |
| Volume (vol) | vol.105 |
| Number (no) | 154 |
| Page | pp.pp.- |
| #Pages | 4 |
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