| Presentation | 2005/6/23 Advanced Poly-Si TFT with Fin-Like Channels(Thin Film Devices and Systems) Huaxiang Yin, Wenxu Xianyu, Hans Cho, Xiaoxin Zhang, Jisim Jung, Doyoung Kim, Hyuck Lim, Kyungbae Park, Jongman Kim, Jangyeon Kwon, Takashi Noguchi, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | The advanced LTPS TFT with 3-Dimensional channels of Fin-Like profile has been demonstrated via the simple Excimer Laser Annealing method and special wide undercut structure without any additional patterning process cost. This approach provides a much narrow Fin-Like channels in devices with high ratio of film thickness to the width and also a high quality poly-silicon film in channels such as smooth surface, tight grain arrangement and medium grain size etc. Due to the stronger electrical stress on the channel by the multi-gate effect and the better film in channel, the new device fabricated on the quartz substrate with Fin-Like channel structure show good characteristics of the highest mobility up to 395cm^2/V・sec, the sub-threshold voltage slope below 400mV/dec and the On-Off current ratio higher than 10^6. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Poly-Si / thin-film-transistors(TFTs) / 3-Dimensional(3D) / Fin / excimer laser annealing(ELA) |
| Paper # | ED2005-101,SDM2005-121 |
| Date of Issue |
| Conference Information | |
| Committee | ED |
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| Conference Date | 2005/6/23(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | ENG |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Advanced Poly-Si TFT with Fin-Like Channels(Thin Film Devices and Systems) |
| Sub Title (in English) | |
| Keyword(1) | Poly-Si |
| Keyword(2) | thin-film-transistors(TFTs) |
| Keyword(3) | 3-Dimensional(3D) |
| Keyword(4) | Fin |
| Keyword(5) | excimer laser annealing(ELA) |
| 1st Author's Name | Huaxiang Yin |
| 1st Author's Affiliation | Samsung Advanced Institute of Technology, Kihung-Eup Yongin-Si() |
| 2nd Author's Name | Wenxu Xianyu |
| 2nd Author's Affiliation | Samsung Advanced Institute of Technology, Kihung-Eup Yongin-Si |
| 3rd Author's Name | Hans Cho |
| 3rd Author's Affiliation | Samsung Advanced Institute of Technology, Kihung-Eup Yongin-Si |
| 4th Author's Name | Xiaoxin Zhang |
| 4th Author's Affiliation | Samsung Advanced Institute of Technology, Kihung-Eup Yongin-Si |
| 5th Author's Name | Jisim Jung |
| 5th Author's Affiliation | Samsung Advanced Institute of Technology, Kihung-Eup Yongin-Si |
| 6th Author's Name | Doyoung Kim |
| 6th Author's Affiliation | Samsung Advanced Institute of Technology, Kihung-Eup Yongin-Si |
| 7th Author's Name | Hyuck Lim |
| 7th Author's Affiliation | Samsung Advanced Institute of Technology, Kihung-Eup Yongin-Si |
| 8th Author's Name | Kyungbae Park |
| 8th Author's Affiliation | Samsung Advanced Institute of Technology, Kihung-Eup Yongin-Si |
| 9th Author's Name | Jongman Kim |
| 9th Author's Affiliation | Samsung Advanced Institute of Technology, Kihung-Eup Yongin-Si |
| 10th Author's Name | Jangyeon Kwon |
| 10th Author's Affiliation | Samsung Advanced Institute of Technology, Kihung-Eup Yongin-Si |
| 11th Author's Name | Takashi Noguchi |
| 11th Author's Affiliation | Samsung Advanced Institute of Technology, Kihung-Eup Yongin-Si:Sungkyunkwan University |
| Date | 2005/6/23 |
| Paper # | ED2005-101,SDM2005-121 |
| Volume (vol) | vol.105 |
| Number (no) | 154 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |