Presentation 2005/6/23
Excimer Laser Annealing of PbZr_<0.4>Ti_<0.6>O_3 Thin Film at Low Temperature for TFT FeRAM Application(Thin Film Devices and Systems)
W. X. XIANYU, H. S. CHO, J. Y. KWON, H. X. YIN, T. NOGUCHI,
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Abstract(in English) In this study, we successfully produced PbZr_<0.4>Ti_<0.6>O_3 (PZT) thin films with high crystallinity and high remnant polarization (Pr) at low process temperatures using pulsed excimer (XeCl) laser irradiation. The amorphous PZT films were annealed at 550℃ for 10min to initiate the nucleation of the PZT perovskite phase, and then annealed with an excimer laser heating at 400℃. X-ray diffraction (XRD) patterns show that 150-230mJ/cm^2 range multi-shot excimer laser irradiation drastically improved the crystallinity of the PZT perovskite phase, and Field emission SEM (FESEM) photographs show that the PZT thin film has uniform-sized crystal grains. The ferroelectric properties were found to depend on the laser energy density and shot number.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) PZT / Excimer Laser annealing
Paper # ED2005-99,SDM2005-119
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Committee ED
Conference Date 2005/6/23(1days)
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Language ENG
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Excimer Laser Annealing of PbZr_<0.4>Ti_<0.6>O_3 Thin Film at Low Temperature for TFT FeRAM Application(Thin Film Devices and Systems)
Sub Title (in English)
Keyword(1) PZT
Keyword(2) Excimer Laser annealing
1st Author's Name W. X. XIANYU
1st Author's Affiliation Advanced Institute of Technology()
2nd Author's Name H. S. CHO
2nd Author's Affiliation Advanced Institute of Technology
3rd Author's Name J. Y. KWON
3rd Author's Affiliation Advanced Institute of Technology
4th Author's Name H. X. YIN
4th Author's Affiliation Advanced Institute of Technology
5th Author's Name T. NOGUCHI
5th Author's Affiliation Advanced Institute of Technology:Sungkyunkwan University
Date 2005/6/23
Paper # ED2005-99,SDM2005-119
Volume (vol) vol.105
Number (no) 154
Page pp.pp.-
#Pages 4
Date of Issue