Presentation | 2005/6/23 Excimer Laser Annealing of PbZr_<0.4>Ti_<0.6>O_3 Thin Film at Low Temperature for TFT FeRAM Application(Thin Film Devices and Systems) W. X. XIANYU, H. S. CHO, J. Y. KWON, H. X. YIN, T. NOGUCHI, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | In this study, we successfully produced PbZr_<0.4>Ti_<0.6>O_3 (PZT) thin films with high crystallinity and high remnant polarization (Pr) at low process temperatures using pulsed excimer (XeCl) laser irradiation. The amorphous PZT films were annealed at 550℃ for 10min to initiate the nucleation of the PZT perovskite phase, and then annealed with an excimer laser heating at 400℃. X-ray diffraction (XRD) patterns show that 150-230mJ/cm^2 range multi-shot excimer laser irradiation drastically improved the crystallinity of the PZT perovskite phase, and Field emission SEM (FESEM) photographs show that the PZT thin film has uniform-sized crystal grains. The ferroelectric properties were found to depend on the laser energy density and shot number. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | PZT / Excimer Laser annealing |
Paper # | ED2005-99,SDM2005-119 |
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Conference Information | |
Committee | ED |
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Conference Date | 2005/6/23(1days) |
Place (in Japanese) | (See Japanese page) |
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Topics (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Electron Devices (ED) |
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Language | ENG |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Excimer Laser Annealing of PbZr_<0.4>Ti_<0.6>O_3 Thin Film at Low Temperature for TFT FeRAM Application(Thin Film Devices and Systems) |
Sub Title (in English) | |
Keyword(1) | PZT |
Keyword(2) | Excimer Laser annealing |
1st Author's Name | W. X. XIANYU |
1st Author's Affiliation | Advanced Institute of Technology() |
2nd Author's Name | H. S. CHO |
2nd Author's Affiliation | Advanced Institute of Technology |
3rd Author's Name | J. Y. KWON |
3rd Author's Affiliation | Advanced Institute of Technology |
4th Author's Name | H. X. YIN |
4th Author's Affiliation | Advanced Institute of Technology |
5th Author's Name | T. NOGUCHI |
5th Author's Affiliation | Advanced Institute of Technology:Sungkyunkwan University |
Date | 2005/6/23 |
Paper # | ED2005-99,SDM2005-119 |
Volume (vol) | vol.105 |
Number (no) | 154 |
Page | pp.pp.- |
#Pages | 4 |
Date of Issue |