| Presentation | 2005/6/22 Channel Engineering of III-Nitride HEMTs for Enhanced Device Performance(High Speed and Optoelectronic Technology II) Kevin J. Chen, Jie Liu, Yugang Zhou, Kei May Lau, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We report several approaches to improving III-nitride HEMT performances through channel engineering. Based on an Al_<0.3>Ga_<0.7>N/Al_<0.05>Ga_<0.95>N/GaN, nearly flat transconductance and gain can be obtained at both the low and high drain current levels, a desirable feature for linear power amplifier operation required by advanced wireless system. For devices grown on sapphire substrate, a maximum power density of 3.38W/mm, a PAE of 45% are obtained at 2GHz. The output third-order intercept point (OIP3) is 33.2dBm at 2GHz. We also demonstrate an AlGaN/GaN/InGaN/GaN HEMT structure that features a 3-nm thin In_xGa_<1-x>N (x=0.1) layer inserted into the conventional AlGaN/GaN HEMT structure. Assisted by the InGaN layer's polarization field that is opposite to that in the AlGaN layer, an additional potential barrier is introduced between the 2DEG channel and buffer, leading to enhanced carrier confinement and improved buffer isolation. Using a conventional GaN buffer grown on sapphire substrate, the off-state source-drain leakage current is as low as ～5μA/mm at V_ |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Channel engineering / III-nitride / HEMTs / composite-channel / InGaN-notch / linearity / carrier confinement |
| Paper # | ED2005-89,SDM2005-109 |
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| Conference Information | |
| Committee | ED |
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| Conference Date | 2005/6/22(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | ENG |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Channel Engineering of III-Nitride HEMTs for Enhanced Device Performance(High Speed and Optoelectronic Technology II) |
| Sub Title (in English) | |
| Keyword(1) | Channel engineering |
| Keyword(2) | III-nitride |
| Keyword(3) | HEMTs |
| Keyword(4) | composite-channel |
| Keyword(5) | InGaN-notch |
| Keyword(6) | linearity |
| Keyword(7) | carrier confinement |
| 1st Author's Name | Kevin J. Chen |
| 1st Author's Affiliation | Department of Electrical and Electronic Engineering, Hong Kong University of Science and Technology() |
| 2nd Author's Name | Jie Liu |
| 2nd Author's Affiliation | Department of Electrical and Electronic Engineering, Hong Kong University of Science and Technology |
| 3rd Author's Name | Yugang Zhou |
| 3rd Author's Affiliation | Department of Electrical and Electronic Engineering, Hong Kong University of Science and Technology |
| 4th Author's Name | Kei May Lau |
| 4th Author's Affiliation | Department of Electrical and Electronic Engineering, Hong Kong University of Science and Technology |
| Date | 2005/6/22 |
| Paper # | ED2005-89,SDM2005-109 |
| Volume (vol) | vol.105 |
| Number (no) | 153 |
| Page | pp.pp.- |
| #Pages | 5 |
| Date of Issue | |