Presentation	2005/6/22 Highly Reliable GaN-HEMT power amplifier(High Speed and Optoelectronic Technology I) Toshihide KIKKAWA, Kazukiyo JOSHIN,
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Abstract(in English)	In this paper, I describe the recent progress and future prospects of GaN high electron mobility transistors (HEMTs) for 3G-wireless base station applications. Highly efficient operation is required for microwave power applications. A state-of-the-art 250-W AlGaN/GaN-HEMTs push-pull transmitter amplifier operated at a drain bias voltage of 50V will be addressed with high efficiency under 3G base station applications. I also demonstrate a stable operation under RF stress testing for 1000h at a drain bias voltage of 60V. HEMT on Large diameter substrates over 3-inch were used Low cost technology using n-type doped SiC substrate will be introduced.
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Keyword(in English)	GaN / HEMT / base station / power amplifier
Paper #	ED2005-86,SDM2005-106
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Conference Information
Committee	ED
Conference Date	2005/6/22(1days)
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Paper Information
Registration To	Electron Devices (ED)
Language	ENG
Title (in Japanese)	(See Japanese page)
Sub Title (in Japanese)	(See Japanese page)
Title (in English)	Highly Reliable GaN-HEMT power amplifier(High Speed and Optoelectronic Technology I)
Sub Title (in English)
Keyword(1)	GaN
Keyword(2)	HEMT
Keyword(3)	base station
Keyword(4)	power amplifier
1st Author's Name	Toshihide KIKKAWA
1st Author's Affiliation	Fujitsu Laboratories Ltd.()
2nd Author's Name	Kazukiyo JOSHIN
2nd Author's Affiliation	Fujitsu Laboratories Ltd.
Date	2005/6/22
Paper #	ED2005-86,SDM2005-106
Volume (vol)	vol.105
Number (no)	153
Page	pp.pp.-
#Pages	6
Date of Issue