Presentation 2005/6/21
High Performance Power MOSFETs by Wing-cell Structure Design(Advanced Si Devices)
Feng Tso Chien, Chien Nan Liao, Chi Ling Wang, Hsien Chin Chiu,
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Abstract(in English) Vertical Power MOSFETs are widely designed by either squared (closed) cell or stripe (linear) cell geometry. Each one owns its advantages over the other one. General speaking, closed cell design have lower on resistance but higher gate charge characteristics than the linear one. In this study, we propose, fabricate, and analyze a "wing cell" structure Power MOSFET, which can have lower on resistance and lower gate charge performances than the closed cell structure. In addition, the wing cell design can avoid the "closed concept" patents.
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Keyword(in English) Power MOSFET / closed cell / linear cell / wing cell
Paper # ED2005-83,SDM2005-103
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Committee ED
Conference Date 2005/6/21(1days)
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Language ENG
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) High Performance Power MOSFETs by Wing-cell Structure Design(Advanced Si Devices)
Sub Title (in English)
Keyword(1) Power MOSFET
Keyword(2) closed cell
Keyword(3) linear cell
Keyword(4) wing cell
1st Author's Name Feng Tso Chien
1st Author's Affiliation Department of Electronic Engineering, Feng Chia University()
2nd Author's Name Chien Nan Liao
2nd Author's Affiliation Department of Electronic Engineering, Feng Chia University
3rd Author's Name Chi Ling Wang
3rd Author's Affiliation Department of Electronic Engineering, Feng Chia University
4th Author's Name Hsien Chin Chiu
4th Author's Affiliation Dept. of Electronic Engineering, Chang Gung University
Date 2005/6/21
Paper # ED2005-83,SDM2005-103
Volume (vol) vol.105
Number (no) 152
Page pp.pp.-
#Pages 6
Date of Issue