Presentation | 2005/6/21 Novel Structures for 2-Bit Per Cell of NVM Using Asymmetric Double Gate(Advanced Si Devices) Kuk Hwan Kim, Hyunjin Lee, Yang Kyu Choi, |
---|---|
PDF Download Page | PDF download Page Link |
Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | A 2-bit operational metal-oxide-nitride-oxide-silicon (MONOS) nonvolatile memory using an asymmetric double-gate (ASDG) MOSFET is studied to double the flash memory density. The 2-bit programming and erasing is performed by Fowler-Nordheim (FN) tunneling in a NAND array architecture using individually controlled gates. A threshold voltage shift of programmed states for the 2-bit operation was investigated with the aid of SILVACO^[○!R] simulator in the both sides of gate by changing gate workfunctions and tunneling oxide thicknesses. In this paper, guidelines of the 2-bit ASDG nonvolatile memory structure and operational conditions are proposed for "program", "read", and "erase". |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | MONOS / Fowler-Nordheim tunneling / Asymmetric double gate / Nonvolatile memory / Flash memory |
Paper # | ED2005-82,SDM2005-102 |
Date of Issue |
Conference Information | |
Committee | ED |
---|---|
Conference Date | 2005/6/21(1days) |
Place (in Japanese) | (See Japanese page) |
Place (in English) | |
Topics (in Japanese) | (See Japanese page) |
Topics (in English) | |
Chair | |
Vice Chair | |
Secretary | |
Assistant |
Paper Information | |
Registration To | Electron Devices (ED) |
---|---|
Language | ENG |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Novel Structures for 2-Bit Per Cell of NVM Using Asymmetric Double Gate(Advanced Si Devices) |
Sub Title (in English) | |
Keyword(1) | MONOS |
Keyword(2) | Fowler-Nordheim tunneling |
Keyword(3) | Asymmetric double gate |
Keyword(4) | Nonvolatile memory |
Keyword(5) | Flash memory |
1st Author's Name | Kuk Hwan Kim |
1st Author's Affiliation | Dept. of EECS, Korea Advanced Institute of Science and Technology() |
2nd Author's Name | Hyunjin Lee |
2nd Author's Affiliation | Dept. of EECS, Korea Advanced Institute of Science and Technology |
3rd Author's Name | Yang Kyu Choi |
3rd Author's Affiliation | Dept. of EECS, Korea Advanced Institute of Science and Technology |
Date | 2005/6/21 |
Paper # | ED2005-82,SDM2005-102 |
Volume (vol) | vol.105 |
Number (no) | 152 |
Page | pp.pp.- |
#Pages | 4 |
Date of Issue |