| Presentation | 2005/6/21 Impact of High Performance Accumulation-Mode Fully Depleted SOI MOSFETs(Advanced Si Devices) Weitao Cheng, Akinobu Teramoto, Masaki Hirayama, Shigetoshi Sugawa, Tadahiro Ohmi, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | This paper focuses attention on the improved device characteristics of Fully Depleted silicon on insulator (FD-SOI) MOSFETs on Si(100) surface by using normally-off Accumulation-mode device structure. We demonstrated that the current drivability of Accumulation-mode FD-SOI n-MOSFET on Si(100) is about 1.3 times larger than that of conventional Inversion-mode FD-SOI n-MOSFET and the current drivability of Accumulation-mode FD-SOI p-MOSFET is about 1.4 times larger than that of conventional Inversion-mode FD-SOI p-MOSFET. Furthermore, the influence of the impact ion phenomenon in Accumulation-Mode FD-SOI is slightly comparison with that of Inversion-Mode FD-SOI MOSFETs. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | FD-SOI / surface roughness / radical oxidation / Accumulation-mode / Inversion-mode |
| Paper # | ED2005-80,SDM2005-100 |
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| Conference Information | |
| Committee | ED |
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| Conference Date | 2005/6/21(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
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| Vice Chair | |
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| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | ENG |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Impact of High Performance Accumulation-Mode Fully Depleted SOI MOSFETs(Advanced Si Devices) |
| Sub Title (in English) | |
| Keyword(1) | FD-SOI |
| Keyword(2) | surface roughness |
| Keyword(3) | radical oxidation |
| Keyword(4) | Accumulation-mode |
| Keyword(5) | Inversion-mode |
| 1st Author's Name | Weitao Cheng |
| 1st Author's Affiliation | Graduate School of Engineering, Tohoku University() |
| 2nd Author's Name | Akinobu Teramoto |
| 2nd Author's Affiliation | New Industry Creation Hatchery Center, Tohoku University |
| 3rd Author's Name | Masaki Hirayama |
| 3rd Author's Affiliation | New Industry Creation Hatchery Center, Tohoku University |
| 4th Author's Name | Shigetoshi Sugawa |
| 4th Author's Affiliation | Graduate School of Engineering, Tohoku University |
| 5th Author's Name | Tadahiro Ohmi |
| 5th Author's Affiliation | New Industry Creation Hatchery Center, Tohoku University |
| Date | 2005/6/21 |
| Paper # | ED2005-80,SDM2005-100 |
| Volume (vol) | vol.105 |
| Number (no) | 152 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |