Presentation	2005/2/25 Ultrahigh-Speed InP-HEMTs-500 GHz Level f_T and f_ Akira ENDOH, Keisuke SHINOHARA, Yoshimi YAMASHITA, Issei WATANABE, Kohki HIKOSAKA, Toshiaki MATSUI, Satoshi HIYAMIZU, Takashi MIMURA,
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Abstract(in English)	We fabricated nanometer-scale InP-HEMTs with 500 GHz level cutoff frequency f_T and maximum oscillation frequency f_. To increase the f_T, we reduced gate length L_g and gate-channel distance d. We obtained an f_T of 562 GHz for L_g=25 nm and d=4 nm. This f_T is the highest value ever reported for any transistor. We also reduced source and drain resistances by using a multilayer cap structure and obtained an f_T of 547 GHz for L_g=30 nm. To increase the f_, we developed the fabrication technique of an asymmetric gate-recess structure with a shorter source-side recess and a longer drain-side recess. We obtained an f_ of 500 GHz. We also mentioned the possibility of InAs-channel HEMTs to obtain higher f_T and f_.
Keyword(in Japanese)	(See Japanese page)
Keyword(in English)	InP-HEMTs / Cutoff frequency / f_T / Maximum oscillation frequency / f_ / InAs
Paper #	ED2004-252
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Conference Information
Committee	ED
Conference Date	2005/2/25(1days)
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Paper Information
Registration To	Electron Devices (ED)
Language	JPN
Title (in Japanese)	(See Japanese page)
Sub Title (in Japanese)	(See Japanese page)
Title (in English)	Ultrahigh-Speed InP-HEMTs-500 GHz Level f_T and f_
Sub Title (in English)
Keyword(1)	InP-HEMTs
Keyword(2)	Cutoff frequency
Keyword(3)	f_T
Keyword(4)	Maximum oscillation frequency
Keyword(5)	f_
Keyword(6)	InAs
1st Author's Name	Akira ENDOH
1st Author's Affiliation	Fujitsu Laboratories Ltd.()
2nd Author's Name	Keisuke SHINOHARA
2nd Author's Affiliation	National Institute of Information and Communications Technology:(Present address)Rockwell Scientific Company LLC
3rd Author's Name	Yoshimi YAMASHITA
3rd Author's Affiliation	Fujitsu Laboratories Ltd.
4th Author's Name	Issei WATANABE
4th Author's Affiliation	National Institute of Information and Communications Technology
5th Author's Name	Kohki HIKOSAKA
5th Author's Affiliation	Fujitsu Laboratories Ltd.
6th Author's Name	Toshiaki MATSUI
6th Author's Affiliation	National Institute of Information and Communications Technology
7th Author's Name	Satoshi HIYAMIZU
7th Author's Affiliation	Graduate School of Engineering Science, Osaka University
8th Author's Name	Takashi MIMURA
8th Author's Affiliation	Fujitsu Laboratories Ltd.
Date	2005/2/25
Paper #	ED2004-252
Volume (vol)	vol.104
Number (no)	694
Page	pp.pp.-
#Pages	6
Date of Issue