Presentation 2005/2/25
Numerical Analysis on Terahertz-Band Field Emission Properties of the 2-D Plasmon-Resonant Photomixer
Mitsuhiro HANABE, Jun-ichi SHIGENOBU, Taiichi OTSUJI, Eiichi SANO,
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Abstract(in English) Authors have already proposed a plasmon-resonant photomixer which incorporates doubly interdigitated grating strips for the gate electrodes and a vertical resonator structure as a future frequency-tunable coherent terahertz source. The numerical analyses on its field-emission properties dependence on the material and dimension parameters were carried out by using FDTD simulation. In case the low-conductivity quantum wires were chosen and the connection parts of the periodic plasmon regions were depleted and insulated, we found that the frequency bands could be expanded to the lower region. In addition, we ensured that the frequency band could be expanded to the higher region by detuning the vertical resonant frequency to be higher than the plasmon characteristic frequencies.
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Keyword(in English) Photomixer / Terahertz / Two-dimensional plasmon / Resonance / Characteristic frequency / Field emission
Paper # ED2004-251
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Committee ED
Conference Date 2005/2/25(1days)
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Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Numerical Analysis on Terahertz-Band Field Emission Properties of the 2-D Plasmon-Resonant Photomixer
Sub Title (in English)
Keyword(1) Photomixer
Keyword(2) Terahertz
Keyword(3) Two-dimensional plasmon
Keyword(4) Resonance
Keyword(5) Characteristic frequency
Keyword(6) Field emission
1st Author's Name Mitsuhiro HANABE
1st Author's Affiliation Graduate School of Computer Science and Systems Engineering, Kyushu Institute of Technology()
2nd Author's Name Jun-ichi SHIGENOBU
2nd Author's Affiliation Graduate School of Computer Science and Systems Engineering, Kyushu Institute of Technology
3rd Author's Name Taiichi OTSUJI
3rd Author's Affiliation Graduate School of Computer Science and Systems Engineering, Kyushu Institute of Technology
4th Author's Name Eiichi SANO
4th Author's Affiliation Research Center for Integrated Quantum Electronics, Hokkaido University
Date 2005/2/25
Paper # ED2004-251
Volume (vol) vol.104
Number (no) 694
Page pp.pp.-
#Pages 5
Date of Issue