Presentation 2005/2/25
Terahertz Gain in Quantum Effect Devices
Kazuhiko HIRAKAWA, Norihiko SEKINE, Yozo SHIMADA,
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Abstract(in English) Ultrafast carrier motion in the femtosecond time regime accompanies electromagnetic wave radiation that is proportional to carrier acceleration. Investigation of such terahertz (THz) radiation allows us a very unique opportunity of quantitative analysis of nonstationary carrier transport and terahertz conductivities in ultrafast semiconductor devices. We have utilized this technique to characterize Bloch gain in semiconductor superlattices and presented firm evidence that Bloch oscillating electrons have a gain up to a few THz.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) terahertz / superlattice / Bloch oscillation
Paper # ED2004-249
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Committee ED
Conference Date 2005/2/25(1days)
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Registration To Electron Devices (ED)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Terahertz Gain in Quantum Effect Devices
Sub Title (in English)
Keyword(1) terahertz
Keyword(2) superlattice
Keyword(3) Bloch oscillation
1st Author's Name Kazuhiko HIRAKAWA
1st Author's Affiliation Institute of Industrial Science, University of Tokyo()
2nd Author's Name Norihiko SEKINE
2nd Author's Affiliation Institute of Industrial Science, University of Tokyo
3rd Author's Name Yozo SHIMADA
3rd Author's Affiliation National Institute of Advanced Industrial Science and Technology
Date 2005/2/25
Paper # ED2004-249
Volume (vol) vol.104
Number (no) 694
Page pp.pp.-
#Pages 6
Date of Issue