Presentation 2005/1/21
An Analysis of RTD/HEMT Oscillation Circuits
Naokazu Muramatsu, Hiroshi Okazaki, Hironori Wada, Takao Waho,
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Abstract(in English) We have designed an oscillator using a resonant tunneling diode (RTD), a high electron mobility transistor (HEMT), and an inductor. We have estimated the performance by SPICE simulation. A frequency as high as 200 GHz has been predicted when the peak current density is 5×10^5 A/cm^2 and the inductance is 0.1 nH.
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Keyword(in English) fast switching / LC time constant / peak current density / RTD / HEMT
Paper # ED2004-239,SDM2004-234
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Committee ED
Conference Date 2005/1/21(1days)
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Registration To Electron Devices (ED)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) An Analysis of RTD/HEMT Oscillation Circuits
Sub Title (in English)
Keyword(1) fast switching
Keyword(2) LC time constant
Keyword(3) peak current density
Keyword(4) RTD
Keyword(5) HEMT
1st Author's Name Naokazu Muramatsu
1st Author's Affiliation Faculty of Science and Technology, Sophia University()
2nd Author's Name Hiroshi Okazaki
2nd Author's Affiliation Faculty of Science and Technology, Sophia University
3rd Author's Name Hironori Wada
3rd Author's Affiliation Faculty of Science and Technology, Sophia University
4th Author's Name Takao Waho
4th Author's Affiliation Faculty of Science and Technology, Sophia University
Date 2005/1/21
Paper # ED2004-239,SDM2004-234
Volume (vol) vol.104
Number (no) 623
Page pp.pp.-
#Pages 4
Date of Issue