| Presentation | 2005/1/20 Fabrication and Characterization of GaAs BDD Quantum Node Devices Utilized Selective MBE Growth Technique Takahiro TAMURA, Miki YUMOTO, Isao TAMAI, Seiya KASAI, Taketomo SATO, Hideki HASEGAWA, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | For realization of future quantum-LSIs (Q-LSIs) based on the novel hexagonal binary decision diagram (BDD) circuit approach, quantum wire (QWR) switches and BDD node devices utilizing selectively MBE grown (SG) QWR networks were investigated. Fabricated SG QWR switches using <-110> and <510>-directed nanowires on GaAs (001) substrate operated as conventional FETs at low temperature up to room temperature and clear conductance quantization was observed at low temperature. Their gate control characteristics were studied by gate-dependent Shubnikov-de-Haas oscillation measurements and it was confirmed good gate controllability of SG QWR switches controlled by Shottky wrap gates (WPGs). Y-branch BDD node devices were successfully fabricated combining <-110> and <510>-directed QWRs and realized clear path-switching. Their speed and power performances were also estimated and values of switching speed τ=50ps and PDP=10^<-18>J were obtained. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | quantum wire network / selective MBE growth / quantum wire switch / binary decision diagram(BDD) / Shottky wrap gate / gate control / GaAs |
| Paper # | ED2004-230,SDM2004-225 |
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| Conference Information | |
| Committee | ED |
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| Conference Date | 2005/1/20(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Fabrication and Characterization of GaAs BDD Quantum Node Devices Utilized Selective MBE Growth Technique |
| Sub Title (in English) | |
| Keyword(1) | quantum wire network |
| Keyword(2) | selective MBE growth |
| Keyword(3) | quantum wire switch |
| Keyword(4) | binary decision diagram(BDD) |
| Keyword(5) | Shottky wrap gate |
| Keyword(6) | gate control |
| Keyword(7) | GaAs |
| 1st Author's Name | Takahiro TAMURA |
| 1st Author's Affiliation | Graduate School of Information Science and Technology, Hokkaido University:Research Center for Integrated Quantum Electronics() |
| 2nd Author's Name | Miki YUMOTO |
| 2nd Author's Affiliation | Graduate School of Information Science and Technology, Hokkaido University:Research Center for Integrated Quantum Electronics |
| 3rd Author's Name | Isao TAMAI |
| 3rd Author's Affiliation | Graduate School of Information Science and Technology, Hokkaido University:Research Center for Integrated Quantum Electronics |
| 4th Author's Name | Seiya KASAI |
| 4th Author's Affiliation | Graduate School of Information Science and Technology, Hokkaido University:Research Center for Integrated Quantum Electronics |
| 5th Author's Name | Taketomo SATO |
| 5th Author's Affiliation | Graduate School of Information Science and Technology, Hokkaido University:Research Center for Integrated Quantum Electronics |
| 6th Author's Name | Hideki HASEGAWA |
| 6th Author's Affiliation | Graduate School of Information Science and Technology, Hokkaido University:Research Center for Integrated Quantum Electronics |
| Date | 2005/1/20 |
| Paper # | ED2004-230,SDM2004-225 |
| Volume (vol) | vol.104 |
| Number (no) | 622 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |