Presentation 2005/1/20
Negative Differential Resistance of CoSi_2/CaF_2 Triple Barrier Resonant Tunneling Diode Grown by Local Epitaxy
Masahiro WATANABE, Shinpei TAMURA, Tohru KANAZAWA, Keisuke JINEN, Masahiro ASADA,
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Abstract(in English) (Metal)CoSi_2/(Insulator)CaF_2 triple barrier resonant tunneling diode structures were grown on Si(111) substrate using Local Epitaxy technique. The heterostructures were grown in holes with diameter of 40nm fabricated by electron beam lithography. In the measurement of I-V characteristics, clear negative differential resistance characteristics were observed at room temperature with peak to valley current ratio (PVR) of 33, which was significantly larger than that of RTDs grown by conventional MEB.
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Keyword(in English) CoSi_2 / CaF_2 / epitaxial growth / resonant tunneling / negative differential resistance
Paper # ED2004-228,SDM2004-223
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Committee ED
Conference Date 2005/1/20(1days)
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Language JPN
Title (in Japanese) (See Japanese page)
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Title (in English) Negative Differential Resistance of CoSi_2/CaF_2 Triple Barrier Resonant Tunneling Diode Grown by Local Epitaxy
Sub Title (in English)
Keyword(1) CoSi_2
Keyword(2) CaF_2
Keyword(3) epitaxial growth
Keyword(4) resonant tunneling
Keyword(5) negative differential resistance
1st Author's Name Masahiro WATANABE
1st Author's Affiliation Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology:SORST()
2nd Author's Name Shinpei TAMURA
2nd Author's Affiliation Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology
3rd Author's Name Tohru KANAZAWA
3rd Author's Affiliation Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology
4th Author's Name Keisuke JINEN
4th Author's Affiliation Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology
5th Author's Name Masahiro ASADA
5th Author's Affiliation Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology:CREST-JST
Date 2005/1/20
Paper # ED2004-228,SDM2004-223
Volume (vol) vol.104
Number (no) 622
Page pp.pp.-
#Pages 4
Date of Issue