| Presentation | 2005/1/20 Fabrication of wire transistor with self-aligned gate by selective area MOVPE N. Ooike, J. Motohisa, T. Fukui, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We have fabricated GaAs/AlGaAs Field Effect Transistor (FETs) having a narrow wire channel and a self-aligned tungsten (W) gate electrode by using Selective-Area Metal Organic Vapor Epitaxy (SA-MOVPE). Stacked film of SiO_2/W was used as a mask for SA-MOVPE. In case that the structure in cross-section fabricated by SA-MOVPE is mesa-shape, the distance between bottom W-gate electrode on the substrate and channel layer become far, as the channel layer forms at a higher position of the mesa structure. So that, we fabricated wire structures with different structural parameters, for example channel-gate distance or channel width, and demonstrated relation of gate-control and their structural parameters. As a result, we obtained that the gate-control depended only on channel width. From these results, we will discuss operation mode of the narrow wire-transistor having self-aligned W gate. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | SA-MOVPE / Self-aligned gate / Narrow wire-transistor |
| Paper # | ED2004-227,SDM2004-222 |
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| Conference Information | |
| Committee | ED |
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| Conference Date | 2005/1/20(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
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| Vice Chair | |
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| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Fabrication of wire transistor with self-aligned gate by selective area MOVPE |
| Sub Title (in English) | |
| Keyword(1) | SA-MOVPE |
| Keyword(2) | Self-aligned gate |
| Keyword(3) | Narrow wire-transistor |
| 1st Author's Name | N. Ooike |
| 1st Author's Affiliation | Graduate School of Information Science and Technology and, Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University() |
| 2nd Author's Name | J. Motohisa |
| 2nd Author's Affiliation | Graduate School of Information Science and Technology and, Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University |
| 3rd Author's Name | T. Fukui |
| 3rd Author's Affiliation | Graduate School of Information Science and Technology and, Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University |
| Date | 2005/1/20 |
| Paper # | ED2004-227,SDM2004-222 |
| Volume (vol) | vol.104 |
| Number (no) | 622 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |