| Presentation | 2005-01-18 Excess leakage currents in AlGaN Schottky interfaces Tamotsu Hashizume, Masamitsu Kaneko, |
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| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | This paper discusses mechanism of excess leakage currents through GaN and AlGaN Schottky interfaces. We point out some problems in the proposed mechanism models for leakage current. It is shown that a simulation model taking into account nitrogen-vacancy related defect donors could explain leakage behavior of GaN Schottky interface. For AlGaN Schottky interfaces, the contribution of the oxygen impurity to excess leakage currents is discussed. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | GaN / AlGaN / Schottky / leakage current / surface / nitrogen vacancy / oxgen impurity |
| Paper # | ED2004-218,MW2004-225 |
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| Conference Information | |
| Committee | ED |
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| Conference Date | 2005/1/11(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Excess leakage currents in AlGaN Schottky interfaces |
| Sub Title (in English) | |
| Keyword(1) | GaN |
| Keyword(2) | AlGaN |
| Keyword(3) | Schottky |
| Keyword(4) | leakage current |
| Keyword(5) | surface |
| Keyword(6) | nitrogen vacancy |
| Keyword(7) | oxgen impurity |
| 1st Author's Name | Tamotsu Hashizume |
| 1st Author's Affiliation | Research Center for Integrated Quantum Electronics, Hokkaido University() |
| 2nd Author's Name | Masamitsu Kaneko |
| 2nd Author's Affiliation | Research Center for Integrated Quantum Electronics, Hokkaido University |
| Date | 2005-01-18 |
| Paper # | ED2004-218,MW2004-225 |
| Volume (vol) | vol.104 |
| Number (no) | 550 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |