Presentation 2004/11/19
Improvements of K-Band 3-D MMIC Design for LNA, MIX, and MOD
Tsuneo TOKUMITSU, Akio OYA, Kazuo SAKAI,
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Abstract(in English) 3-D MMIC technology is expected to extremely miniaturize circuit components as well as to increase the integration level of multi-functional MMICs. However, for application to practical products, it is still necessary to make efforts and inventions that suppress (or remove) the influences of the transmission line losses and the limited number of dielectric layers. In this paper, some practical methods for improving: LNA 's noise figure; MIX 90° coupler's insertion loss and balance; and 2φ modulator's bandwidth and operation speed, are discussed over the fabricated devices. The dielectric layer structure we use consists of five polyimide layers over GaAs substrate. The 5-layer polyimide structure is designated to be humidity proof and the 90° coupler effectively uses this layer structure.
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Keyword(in English) 3-D MMIC / LNA / MIX / 0/π modulator / broadside coupler
Paper # ED2004-176,MW2004-192
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Committee ED
Conference Date 2004/11/19(1days)
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Registration To Electron Devices (ED)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Improvements of K-Band 3-D MMIC Design for LNA, MIX, and MOD
Sub Title (in English)
Keyword(1) 3-D MMIC
Keyword(2) LNA
Keyword(3) MIX
Keyword(4) 0/π modulator
Keyword(5) broadside coupler
1st Author's Name Tsuneo TOKUMITSU
1st Author's Affiliation Eudyna Devices Inc.()
2nd Author's Name Akio OYA
2nd Author's Affiliation Eudyna Devices Inc.
3rd Author's Name Kazuo SAKAI
3rd Author's Affiliation Eudyna Devices Inc.
Date 2004/11/19
Paper # ED2004-176,MW2004-192
Volume (vol) vol.104
Number (no) 461
Page pp.pp.-
#Pages 6
Date of Issue