Presentation | 2004/11/5 Reliability of 0.18 μm gate GaAs-MESFETs fabricated by i-line lithography process Yasuhiro TOSAKA, Masataka WATANABE, Daiji FUKUSHI, Hiroshi YANO, Shigeru NAKAJIMA, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | A 0.18 μm GaAs-MESFET fabrication process with low cost and high uniformity was established by means of i-line lithography and ion-implantation technology. As the result of the investigation of 0.18 μm GaAs-MESFET using the high temperature accelerated life test, the activation energy of 1.54eV and mean time to failure (MTTF) of 2.4×10^5 hours at a junction temperature of 150℃ ware obtained. The sinking of Ti metal at the interface between the gate metal and GaAs substrate was revealed using the analysis of TEM and EDX. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | MESFET / i-line lithography / reliability / activation energy / gate-sinking |
Paper # | R2004-46,ED2004-159 |
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Conference Information | |
Committee | ED |
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Conference Date | 2004/11/5(1days) |
Place (in Japanese) | (See Japanese page) |
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Topics (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Electron Devices (ED) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Reliability of 0.18 μm gate GaAs-MESFETs fabricated by i-line lithography process |
Sub Title (in English) | |
Keyword(1) | MESFET |
Keyword(2) | i-line lithography |
Keyword(3) | reliability |
Keyword(4) | activation energy |
Keyword(5) | gate-sinking |
1st Author's Name | Yasuhiro TOSAKA |
1st Author's Affiliation | Eudyna Devices Inc.() |
2nd Author's Name | Masataka WATANABE |
2nd Author's Affiliation | Eudyna Devices Inc. |
3rd Author's Name | Daiji FUKUSHI |
3rd Author's Affiliation | Eudyna Devices Inc. |
4th Author's Name | Hiroshi YANO |
4th Author's Affiliation | Eudyna Devices Inc. |
5th Author's Name | Shigeru NAKAJIMA |
5th Author's Affiliation | Eudyna Devices Inc. |
Date | 2004/11/5 |
Paper # | R2004-46,ED2004-159 |
Volume (vol) | vol.104 |
Number (no) | 428 |
Page | pp.pp.- |
#Pages | 6 |
Date of Issue |