| Presentation | 2004/11/5 Blocking Capability of SOI-LIGBTs Imposed thermal and Electrical Stress Hitoshi Sumida, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Long-term reliability of high-voltage lateral IGBTs on SOI is reported. Thermal and electrical stress was constantly imposed on the devices during 1000 hours. The breakdown voltages of the devices were measured at a certain time for the duration of the test. These results together with the failure analysis of the devices with the deteriorated characteristics are shown in this paper. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | high-voltage lateral IGBT / SOI / blocking capability / thermal and electrical stress / failure analysis |
| Paper # | R2004-41,ED2004-154 |
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| Conference Information | |
| Committee | ED |
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| Conference Date | 2004/11/5(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Blocking Capability of SOI-LIGBTs Imposed thermal and Electrical Stress |
| Sub Title (in English) | |
| Keyword(1) | high-voltage lateral IGBT |
| Keyword(2) | SOI |
| Keyword(3) | blocking capability |
| Keyword(4) | thermal and electrical stress |
| Keyword(5) | failure analysis |
| 1st Author's Name | Hitoshi Sumida |
| 1st Author's Affiliation | Fuji Electric Device Technology Co., Ltd.() |
| Date | 2004/11/5 |
| Paper # | R2004-41,ED2004-154 |
| Volume (vol) | vol.104 |
| Number (no) | 428 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |