Presentation | 2005/5/20 Characterization of GaN grown at room temperature by PLD Hiroshi FUJIOKA, Atsushi KOBAYASHI, Jitsuo OHTA, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | We have investigated characteristics of GaN grown on nearly lattice-matched ZnO substrates by the use of pulsed laser deposition (PLD) at low substrate temperatures. It has been found that the interfacial reactions between GaN and the substrates are suppressed with the reduction of the growth temperature and high quality GaN grows epitaxially at room temperature on the chemically vulnerable ZnO substrates. RHEED observations have revealed that these films grow with the layer-by-layer mode and the atomically flat surfaces with stepped and terraced structures are obtained. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | Windows / Word / Technical Report / Template |
Paper # | ED2005-51,CPM2005-43,SDM2005-51 |
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Committee | CPM |
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Conference Date | 2005/5/20(1days) |
Place (in Japanese) | (See Japanese page) |
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Registration To | Component Parts and Materials (CPM) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Characterization of GaN grown at room temperature by PLD |
Sub Title (in English) | |
Keyword(1) | Windows |
Keyword(2) | Word |
Keyword(3) | Technical Report |
Keyword(4) | Template |
1st Author's Name | Hiroshi FUJIOKA |
1st Author's Affiliation | Institute of Industrial Science, The University of Tokyo:Kanagawa Academy of Science and Technology() |
2nd Author's Name | Atsushi KOBAYASHI |
2nd Author's Affiliation | Kanagawa Academy of Science and Technology |
3rd Author's Name | Jitsuo OHTA |
3rd Author's Affiliation | Institute of Industrial Science, The University of Tokyo:Kanagawa Academy of Science and Technology |
Date | 2005/5/20 |
Paper # | ED2005-51,CPM2005-43,SDM2005-51 |
Volume (vol) | vol.105 |
Number (no) | 92 |
Page | pp.pp.- |
#Pages | 6 |
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