Presentation 2005/5/20
Characterization of GaN grown at room temperature by PLD
Hiroshi FUJIOKA, Atsushi KOBAYASHI, Jitsuo OHTA,
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Abstract(in English) We have investigated characteristics of GaN grown on nearly lattice-matched ZnO substrates by the use of pulsed laser deposition (PLD) at low substrate temperatures. It has been found that the interfacial reactions between GaN and the substrates are suppressed with the reduction of the growth temperature and high quality GaN grows epitaxially at room temperature on the chemically vulnerable ZnO substrates. RHEED observations have revealed that these films grow with the layer-by-layer mode and the atomically flat surfaces with stepped and terraced structures are obtained.
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Paper # ED2005-51,CPM2005-43,SDM2005-51
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Committee CPM
Conference Date 2005/5/20(1days)
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Language JPN
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Title (in English) Characterization of GaN grown at room temperature by PLD
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1st Author's Name Hiroshi FUJIOKA
1st Author's Affiliation Institute of Industrial Science, The University of Tokyo:Kanagawa Academy of Science and Technology()
2nd Author's Name Atsushi KOBAYASHI
2nd Author's Affiliation Kanagawa Academy of Science and Technology
3rd Author's Name Jitsuo OHTA
3rd Author's Affiliation Institute of Industrial Science, The University of Tokyo:Kanagawa Academy of Science and Technology
Date 2005/5/20
Paper # ED2005-51,CPM2005-43,SDM2005-51
Volume (vol) vol.105
Number (no) 92
Page pp.pp.-
#Pages 6
Date of Issue