Presentation 2005/5/20
Control of leakage currents in AlGaN/GaN Schottky interfaces
Masamitsu KANEKO, Tamotsu HASHIZUME,
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Abstract(in English) This paper presents surface-control process for controlling leakage currents through Schottky interfaces upon AlGaN/GaN heterostructures. From the detailed I-V-T characteristics, the leakage currents depend on the tunneling transport through Schottky interfaces. It is observed that the contribution of tunneling transports to leakage currents drastically decrease after the process including ultrathin Al deposition and UHV anneal. From the XPS analysis, this may result from the curing of surface defects or gettering of oxygen donors near the AlGaN surface.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) GaN / AlGaN / Schottky interface / leakage current / surface / defect / oxygen impurity
Paper # ED2005-45,CPM2005-37,SDM2005-45
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Committee CPM
Conference Date 2005/5/20(1days)
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Registration To Component Parts and Materials (CPM)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Control of leakage currents in AlGaN/GaN Schottky interfaces
Sub Title (in English)
Keyword(1) GaN
Keyword(2) AlGaN
Keyword(3) Schottky interface
Keyword(4) leakage current
Keyword(5) surface
Keyword(6) defect
Keyword(7) oxygen impurity
1st Author's Name Masamitsu KANEKO
1st Author's Affiliation Research Center for Integrated Quantum Electronics, Hokkaido University()
2nd Author's Name Tamotsu HASHIZUME
2nd Author's Affiliation Research Center for Integrated Quantum Electronics, Hokkaido University
Date 2005/5/20
Paper # ED2005-45,CPM2005-37,SDM2005-45
Volume (vol) vol.105
Number (no) 92
Page pp.pp.-
#Pages 4
Date of Issue