Presentation | 2005/5/20 Control of leakage currents in AlGaN/GaN Schottky interfaces Masamitsu KANEKO, Tamotsu HASHIZUME, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | This paper presents surface-control process for controlling leakage currents through Schottky interfaces upon AlGaN/GaN heterostructures. From the detailed I-V-T characteristics, the leakage currents depend on the tunneling transport through Schottky interfaces. It is observed that the contribution of tunneling transports to leakage currents drastically decrease after the process including ultrathin Al deposition and UHV anneal. From the XPS analysis, this may result from the curing of surface defects or gettering of oxygen donors near the AlGaN surface. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | GaN / AlGaN / Schottky interface / leakage current / surface / defect / oxygen impurity |
Paper # | ED2005-45,CPM2005-37,SDM2005-45 |
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Committee | CPM |
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Conference Date | 2005/5/20(1days) |
Place (in Japanese) | (See Japanese page) |
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Topics (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Component Parts and Materials (CPM) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Control of leakage currents in AlGaN/GaN Schottky interfaces |
Sub Title (in English) | |
Keyword(1) | GaN |
Keyword(2) | AlGaN |
Keyword(3) | Schottky interface |
Keyword(4) | leakage current |
Keyword(5) | surface |
Keyword(6) | defect |
Keyword(7) | oxygen impurity |
1st Author's Name | Masamitsu KANEKO |
1st Author's Affiliation | Research Center for Integrated Quantum Electronics, Hokkaido University() |
2nd Author's Name | Tamotsu HASHIZUME |
2nd Author's Affiliation | Research Center for Integrated Quantum Electronics, Hokkaido University |
Date | 2005/5/20 |
Paper # | ED2005-45,CPM2005-37,SDM2005-45 |
Volume (vol) | vol.105 |
Number (no) | 92 |
Page | pp.pp.- |
#Pages | 4 |
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