| Presentation | 2005/5/20 Epitaxial growth of hexagonal InN films on GaAs substrates by electron cyclotron plasma-assisted MBE Tokuo YODO, Kiyonaga TAMOTO, Teruya SHIMADA, Hiroyuki NIGUCHI, Youhei FUJII, Takefumi MAOKA, Yoshiyuki HARADA, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Hexagonal InN has recently been given much attention as a material for high-speed electron device because of the smallest effective electron mass, the highest electron mobility and the fastest drift velocity of III-nitride semiconductors. Although the band-gap energy has been long believed to be 1.9eV, it has been recently modified by many researchers to be below 0.8eV, accompanied with drastic improvement of growth techniques, and reconsidered as a material of near-far infrared light emitting devices (LEDs). We have grown high-quality hexagonal InN films on nitride-treated GaAs(001) substrates for developing low-cost full-color LED. In this report, we estimate the film characteristics and clarify the optimum growth process for obtaining hexagonal InN films with high quality. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Hexagonal InN / ECR-plasma assisted MBE / GaAs(001) substrate / substrate nitridation |
| Paper # | ED2005-40,CPM2005-32,SDM2005-40 |
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| Conference Information | |
| Committee | CPM |
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| Conference Date | 2005/5/20(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Component Parts and Materials (CPM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Epitaxial growth of hexagonal InN films on GaAs substrates by electron cyclotron plasma-assisted MBE |
| Sub Title (in English) | |
| Keyword(1) | Hexagonal InN |
| Keyword(2) | ECR-plasma assisted MBE |
| Keyword(3) | GaAs(001) substrate |
| Keyword(4) | substrate nitridation |
| 1st Author's Name | Tokuo YODO |
| 1st Author's Affiliation | Electronics, Information and Communication Engineering, Osaka Institute of Technology() |
| 2nd Author's Name | Kiyonaga TAMOTO |
| 2nd Author's Affiliation | Electronics, Information and Communication Engineering, Osaka Institute of Technology |
| 3rd Author's Name | Teruya SHIMADA |
| 3rd Author's Affiliation | Electronics, Information and Communication Engineering, Osaka Institute of Technology |
| 4th Author's Name | Hiroyuki NIGUCHI |
| 4th Author's Affiliation | Electronics, Information and Communication Engineering, Osaka Institute of Technology |
| 5th Author's Name | Youhei FUJII |
| 5th Author's Affiliation | Electronics, Information and Communication Engineering, Osaka Institute of Technology |
| 6th Author's Name | Takefumi MAOKA |
| 6th Author's Affiliation | Electronics, Information and Communication Engineering, Osaka Institute of Technology |
| 7th Author's Name | Yoshiyuki HARADA |
| 7th Author's Affiliation | Applied Physics, Osaka Institute of Technology |
| Date | 2005/5/20 |
| Paper # | ED2005-40,CPM2005-32,SDM2005-40 |
| Volume (vol) | vol.105 |
| Number (no) | 92 |
| Page | pp.pp.- |
| #Pages | 5 |
| Date of Issue | |