Presentation 2005/5/19
Thermodynamic stability of InAlGaN thin films grown on GaN and InN
Yoshihiro KANGAWA, Koichi KAKIMOTO, Tomonori ITO, Akinori KOUKITU,
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Abstract(in English) We investigated thermodynamic stability of InAlGaN based on calculations of enthalpy of mixing using empirical interatomic potentials. Moreover, we studied influence of lattice constraint from bottom layers ((0001)GaN and (0001)InN layer) on the thermodynamic stability of the semiconductor thin films. The results suggest that maximum point of the enthalpy of mixing shift to In-rich (In-poor) side if InAlGaN thin film is on the GaN (InN) layer. These results suggest that the lattice constraint from bottom layer has a significant influence on thermodynamic stability of thin films.
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Keyword(in English) InAlGaN / compositional instability / enthalpy of mixing / lattice constraint
Paper # ED2005-33,CPM2005-25,SDM2005-33
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Committee CPM
Conference Date 2005/5/19(1days)
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Language JPN
Title (in Japanese) (See Japanese page)
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Title (in English) Thermodynamic stability of InAlGaN thin films grown on GaN and InN
Sub Title (in English)
Keyword(1) InAlGaN
Keyword(2) compositional instability
Keyword(3) enthalpy of mixing
Keyword(4) lattice constraint
1st Author's Name Yoshihiro KANGAWA
1st Author's Affiliation Research Institute for Applied Mechanics, Kyushu University()
2nd Author's Name Koichi KAKIMOTO
2nd Author's Affiliation Research Institute for Applied Mechanics, Kyushu University
3rd Author's Name Tomonori ITO
3rd Author's Affiliation Faculty of Engineering, Mie University
4th Author's Name Akinori KOUKITU
4th Author's Affiliation Institute of Symbiotic Science and Technology, Tokyo University of A & T
Date 2005/5/19
Paper # ED2005-33,CPM2005-25,SDM2005-33
Volume (vol) vol.105
Number (no) 91
Page pp.pp.-
#Pages 4
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