| Presentation | 2005/5/19 Studies toward the Realization of High-Efficiency Quaternary InAlGaN-Based UV-LEDs Hideki HIRAYAMA, Tomoaki OHASHI, Koji ISHIBASHI, Norihiko KAMATA, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | 250-350nm-band high-efficiency ultraviolet (UV) light-emitting diodes (LEDs) or laser diodes (LDs) are very attractive for the application to white lighting, medical fields, etc. Quaternary InAlGaN is important for the emitting layer of UV devices because of the high-efficiency UV emission due to In-segregation effects. In this report, we demonstrate significant improvement of UV emission efficiency of quaternary InAlGaN due to the reduction of oxygen impurity by growing higher growth presser. Using these growth conditions, we achieved high-efficiency photoluminescence (PL) emission at 295nm at room temperature. We also fabricated quaternary InAlGaN quantum well (QW) LED structures on high-quality sapphire/AlN templates and obtained 303-312nm emission by current injection. We also revealed that an electron-blocking layer plays an important role to obtain a sufficiently high injection efficiency in deep-UV LEDs by using simulation results. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | quaternary InAlGaN / UV-LEDs / In segregation / MOCVD / electron-blocking layer |
| Paper # | ED2005-32,CPM2005-24,SDM2005-32 |
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| Conference Information | |
| Committee | CPM |
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| Conference Date | 2005/5/19(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Chair | |
| Vice Chair | |
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| Paper Information | |
| Registration To | Component Parts and Materials (CPM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Studies toward the Realization of High-Efficiency Quaternary InAlGaN-Based UV-LEDs |
| Sub Title (in English) | |
| Keyword(1) | quaternary InAlGaN |
| Keyword(2) | UV-LEDs |
| Keyword(3) | In segregation |
| Keyword(4) | MOCVD |
| Keyword(5) | electron-blocking layer |
| 1st Author's Name | Hideki HIRAYAMA |
| 1st Author's Affiliation | RIKEN (The Institute of Physical and Chemical Research)() |
| 2nd Author's Name | Tomoaki OHASHI |
| 2nd Author's Affiliation | RIKEN (The Institute of Physical and Chemical Research):Saitama University |
| 3rd Author's Name | Koji ISHIBASHI |
| 3rd Author's Affiliation | RIKEN (The Institute of Physical and Chemical Research) |
| 4th Author's Name | Norihiko KAMATA |
| 4th Author's Affiliation | Saitama University |
| Date | 2005/5/19 |
| Paper # | ED2005-32,CPM2005-24,SDM2005-32 |
| Volume (vol) | vol.105 |
| Number (no) | 91 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |