Presentation 2005-01-27
Observation of MOSFETs using laser THz-emission microscope
Masatsugu Yamashita, Kodo Kawase, Chiko Otani, Kiyoshi Nikawa, Masayoshi Tonouchi,
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Abstract(in English) We proposed and developed a laser THz emission microscope (LTEM) as a novel tool for inspecting electrical failures in semiconductor devices. LTEM provides an image reflecting the electric field distribution in LSI chip by scanning it with fs laser pulses. By comparing LTEM images of a normal chip and a damaged one, we observed the difference in the LTEM image near the damaged area. Here, we report the experimental result on non-biased MOSFETs embedded in a test element group. We found that the LTEM images of damaged samples changed from those of normal samples both under biased and non-biased condition. This indicates that the LTEM is a potential tool for inspecting electrical failures in circuits.
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Keyword(in English) LSI / fault localization / THz emission / femtosecond laser
Paper # CPM2004-160,ICD2004-205
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Committee CPM
Conference Date 2005/1/20(1days)
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Registration To Component Parts and Materials (CPM)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Observation of MOSFETs using laser THz-emission microscope
Sub Title (in English)
Keyword(1) LSI
Keyword(2) fault localization
Keyword(3) THz emission
Keyword(4) femtosecond laser
1st Author's Name Masatsugu Yamashita
1st Author's Affiliation RIKEN()
2nd Author's Name Kodo Kawase
2nd Author's Affiliation RIKEN
3rd Author's Name Chiko Otani
3rd Author's Affiliation RIKEN
4th Author's Name Kiyoshi Nikawa
4th Author's Affiliation NEC Electronics Corporation
5th Author's Name Masayoshi Tonouchi
5th Author's Affiliation Institute of Laser Engineering, Osaka University
Date 2005-01-27
Paper # CPM2004-160,ICD2004-205
Volume (vol) vol.104
Number (no) 626
Page pp.pp.-
#Pages 4
Date of Issue