Presentation 2005-01-27
Observation of completed LSI after building-in defect using laser-SQUID microscopy
T. Sakai, K. Nikawa,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) We have been improving and evaluating this system. In this meeting, we report observation results of completed LSI after building-in defect using laser-SQUID microscopy. First, we took magnetic intensity and phase images from same kind of samples without building-in defects in same experimental condition. We got similar images from each samples. Secondary, we observed a sample that was made open-circuit by focused ion beam (FIB). Magnetic intensity image showed strong contrast at positions of built-in defects. The phase at opposite sides of built-in defects showed about 180-degree change. These results shows we can directly localize open interconnects using the scanning laser-SQUID microscope.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Scanning Laser-SQUID microscope / built-in defect / intensity image / phase image / Open-circuit localization
Paper # CPM2004-158,ICD2004-203
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Conference Information
Committee CPM
Conference Date 2005/1/20(1days)
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Registration To Component Parts and Materials (CPM)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Observation of completed LSI after building-in defect using laser-SQUID microscopy
Sub Title (in English)
Keyword(1) Scanning Laser-SQUID microscope
Keyword(2) built-in defect
Keyword(3) intensity image
Keyword(4) phase image
Keyword(5) Open-circuit localization
1st Author's Name T. Sakai
1st Author's Affiliation Test Analysis Technology Development Division, NEC Electronics Corporation()
2nd Author's Name K. Nikawa
2nd Author's Affiliation Test Analysis Technology Development Division, NEC Electronics Corporation
Date 2005-01-27
Paper # CPM2004-158,ICD2004-203
Volume (vol) vol.104
Number (no) 626
Page pp.pp.-
#Pages 6
Date of Issue