Presentation 2004/11/5
Magnetotransport properties of (Ga,Mn)As grown on Si (100) substrates
Shin-ya SATO, Yoshio JINBO, Naotaka UCHITOMI,
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Abstract(in English) We investigated the properties and annealing effects of substrate-free (Ga,Mn)As films prepared by etching Si substrates from (Ga,Mn)As/Si structures, and compared the results with those from (Ga,Mn)As/Si heterostructures. The substrate-free (Ga,Mn)As films with 6 % Mn content were annealed at 250 ℃ as a function of time. From Hall-effect measurements, the Curie temperature of substrate-free (Ga,Mn)As films was estimated to be 87 K for an as-grown film, enhanced up to 152 K after low temperature annealing for 60 min. We found that the (Ga,Mn)As films grown on Si substrates show a relatively high Curie temperature.
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Keyword(in English) Diluted magnetic semiconductor (DMS) / (Ga,Mn)As / anomalous Hall effect
Paper # CPM2004-139
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Committee CPM
Conference Date 2004/11/5(1days)
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Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Magnetotransport properties of (Ga,Mn)As grown on Si (100) substrates
Sub Title (in English)
Keyword(1) Diluted magnetic semiconductor (DMS)
Keyword(2) (Ga,Mn)As
Keyword(3) anomalous Hall effect
1st Author's Name Shin-ya SATO
1st Author's Affiliation Department of Electrical Engineering, Nagaoka University of Technology()
2nd Author's Name Yoshio JINBO
2nd Author's Affiliation Department of Electrical Engineering, Nagaoka University of Technology
3rd Author's Name Naotaka UCHITOMI
3rd Author's Affiliation Department of Electrical Engineering, Nagaoka University of Technology
Date 2004/11/5
Paper # CPM2004-139
Volume (vol) vol.104
Number (no) 426
Page pp.pp.-
#Pages 4
Date of Issue