Presentation | 2004/11/5 Magnetotransport properties of (Ga,Mn)As grown on Si (100) substrates Shin-ya SATO, Yoshio JINBO, Naotaka UCHITOMI, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | We investigated the properties and annealing effects of substrate-free (Ga,Mn)As films prepared by etching Si substrates from (Ga,Mn)As/Si structures, and compared the results with those from (Ga,Mn)As/Si heterostructures. The substrate-free (Ga,Mn)As films with 6 % Mn content were annealed at 250 ℃ as a function of time. From Hall-effect measurements, the Curie temperature of substrate-free (Ga,Mn)As films was estimated to be 87 K for an as-grown film, enhanced up to 152 K after low temperature annealing for 60 min. We found that the (Ga,Mn)As films grown on Si substrates show a relatively high Curie temperature. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | Diluted magnetic semiconductor (DMS) / (Ga,Mn)As / anomalous Hall effect |
Paper # | CPM2004-139 |
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Committee | CPM |
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Conference Date | 2004/11/5(1days) |
Place (in Japanese) | (See Japanese page) |
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Registration To | Component Parts and Materials (CPM) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Magnetotransport properties of (Ga,Mn)As grown on Si (100) substrates |
Sub Title (in English) | |
Keyword(1) | Diluted magnetic semiconductor (DMS) |
Keyword(2) | (Ga,Mn)As |
Keyword(3) | anomalous Hall effect |
1st Author's Name | Shin-ya SATO |
1st Author's Affiliation | Department of Electrical Engineering, Nagaoka University of Technology() |
2nd Author's Name | Yoshio JINBO |
2nd Author's Affiliation | Department of Electrical Engineering, Nagaoka University of Technology |
3rd Author's Name | Naotaka UCHITOMI |
3rd Author's Affiliation | Department of Electrical Engineering, Nagaoka University of Technology |
Date | 2004/11/5 |
Paper # | CPM2004-139 |
Volume (vol) | vol.104 |
Number (no) | 426 |
Page | pp.pp.- |
#Pages | 4 |
Date of Issue |