Presentation 2004/11/5
Optical Characterization of Sn-Doped GaAs_<1-x>Sb_x Epilayers
Fumio Nishino, Tatsuya Takei, Ariyuki Kato, Yoshio Jinbo, Naotaka Uchitomi,
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Abstract(in English) We have optically investigated ternary GaAs_<1-x>Sb_x ( x < 0.58 ) epilayers and Sn-doped GaAs_<1-x>Sb_x ( x = 0.10 ~0.14 ) epilayers grown by molecular beam epitaxy on GaAs (001) substrates. Sn-doped GaAsSb layers were grown as a function of Sn Knudsen-cell temperature, and then characterized by low-temperature photoluminescence (PL) measurements and Hall effect measurements. The Sn-doped GaAsSb films grown at a K-cell temperature of 670℃ changed from exhibiting p-type conduction to exhibiting n-type conduction, and showed a maximum PL intensity and a maximum electron mobility of 1900 cm^2/V s. The PL intensities obtained for Sn-doped GaAsSb films showed a relatively good correlation with the variations in Hall mobility.
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Keyword(in English) GaAsSb / Sn dopeing / photoluminescence
Paper # CPM2004-138
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Committee CPM
Conference Date 2004/11/5(1days)
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Registration To Component Parts and Materials (CPM)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Optical Characterization of Sn-Doped GaAs_<1-x>Sb_x Epilayers
Sub Title (in English)
Keyword(1) GaAsSb
Keyword(2) Sn dopeing
Keyword(3) photoluminescence
1st Author's Name Fumio Nishino
1st Author's Affiliation Department of Electrical Engineering, Nagaoka University of Technology()
2nd Author's Name Tatsuya Takei
2nd Author's Affiliation Department of Electrical Engineering, Nagaoka University of Technology
3rd Author's Name Ariyuki Kato
3rd Author's Affiliation Department of Electrical Engineering, Nagaoka University of Technology
4th Author's Name Yoshio Jinbo
4th Author's Affiliation Department of Electrical Engineering, Nagaoka University of Technology
5th Author's Name Naotaka Uchitomi
5th Author's Affiliation Department of Electrical Engineering, Nagaoka University of Technology
Date 2004/11/5
Paper # CPM2004-138
Volume (vol) vol.104
Number (no) 426
Page pp.pp.-
#Pages 4
Date of Issue