Presentation 2004/11/5
Analysis of surface reaction during Si(001)-c(4×4) formation using MMS
Masayuki HARASHIMA, Kanji YASUI, Masasuke TAKATA, Tadashi AKAHANE,
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Abstract(in English) A surface structural change during initial stage of SiC growth on Si(001) using monomethylsilane (MMS) was analyzed. It was found that c(4×4) domains spread over the surface with an amount of carbon incorporation. After Si(001) surface was covered with c(4×4) structure, both reduction of the defects such as dimer vacancies and progress of step-bunching were observed. The simultaneous occurrence of these phenomena is a unique characteristic of the c(4×4) formation using MMS. These phenomena are considered to be important for the application of the c(4×4) surface to a template substrate for nano-structure. The structural change of c(4×4) to 2×n around SiC nuclei was also observed.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Template substrate / Nano-structure / c(4×4) structure / Step-bunching / Dimer vacancy / SiC
Paper # CPM2004-135
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Committee CPM
Conference Date 2004/11/5(1days)
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Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Analysis of surface reaction during Si(001)-c(4×4) formation using MMS
Sub Title (in English)
Keyword(1) Template substrate
Keyword(2) Nano-structure
Keyword(3) c(4×4) structure
Keyword(4) Step-bunching
Keyword(5) Dimer vacancy
Keyword(6) SiC
1st Author's Name Masayuki HARASHIMA
1st Author's Affiliation Department of Electrical Engineering, Nagaoka University of Technology()
2nd Author's Name Kanji YASUI
2nd Author's Affiliation Department of Electrical Engineering, Nagaoka University of Technology
3rd Author's Name Masasuke TAKATA
3rd Author's Affiliation Department of Electrical Engineering, Nagaoka University of Technology
4th Author's Name Tadashi AKAHANE
4th Author's Affiliation Department of Electrical Engineering, Nagaoka University of Technology
Date 2004/11/5
Paper # CPM2004-135
Volume (vol) vol.104
Number (no) 426
Page pp.pp.-
#Pages 6
Date of Issue