Presentation | 2004/11/4 Investigation of High Rate Sputtering Method for the Deposition of TiO_2 Films Tomoki TAKAHASHI, Yoichi HOSHI, Shigetoshi KAWAGUCHI, Eisuke SUZUKI, Osamu KAMIYA, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | It is well known that deposition rate decreases remarkably when TiO_2 films are deposited by reactive sputtering of titanium target. This is mainly due to a drastic decrease of deposition rate at transition region where titanium target surface is covered with oxide layer, that is, the sputtering yield of Ti atoms from the TiO_2 Suface layer is very low. In this study, high rate deposition method was investigated by both computer simulation and experimental, and following results were obtained. (1)High rate deposition can be realized by introducing a large area ratio of substrate to target in the reactive sputtering of titanium target. (2)Oxide target is useful to realize a high rate deposition. (3)Two targets sputtering method is not effective to eliminate the transition region in the reactive sputtering, so that high rate deposition cannot be realized by the method. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | TiO_2 thin film / reactive sputtering / high rate sputtering / computer simulation |
Paper # | CPM2004-133 |
Date of Issue |
Conference Information | |
Committee | CPM |
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Conference Date | 2004/11/4(1days) |
Place (in Japanese) | (See Japanese page) |
Place (in English) | |
Topics (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Component Parts and Materials (CPM) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Investigation of High Rate Sputtering Method for the Deposition of TiO_2 Films |
Sub Title (in English) | |
Keyword(1) | TiO_2 thin film |
Keyword(2) | reactive sputtering |
Keyword(3) | high rate sputtering |
Keyword(4) | computer simulation |
1st Author's Name | Tomoki TAKAHASHI |
1st Author's Affiliation | Faculty of Engineering, Tokyo Polytechnic University() |
2nd Author's Name | Yoichi HOSHI |
2nd Author's Affiliation | Faculty of Engineering, Tokyo Polytechnic University |
3rd Author's Name | Shigetoshi KAWAGUCHI |
3rd Author's Affiliation | Faculty of Engineering, Tokyo Polytechnic University |
4th Author's Name | Eisuke SUZUKI |
4th Author's Affiliation | Faculty of Engineering, Tokyo Polytechnic University |
5th Author's Name | Osamu KAMIYA |
5th Author's Affiliation | Production Engineering Research Laboratory, Cannon INC. |
Date | 2004/11/4 |
Paper # | CPM2004-133 |
Volume (vol) | vol.104 |
Number (no) | 425 |
Page | pp.pp.- |
#Pages | 6 |
Date of Issue |