| Presentation | 2004/11/4 Growth of preferentially oriented Cu(111) layer on randomly oriented ZrN barrier in Cu/ZrN/Si contact Masaru SATOH, Mayumi B. TAKEYAMA, Atsushi NOYA, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | In Si-ULSI metallization technology, the growth of a Cu(111) preferentially oriented film is an important factor in the improvement of the electromigration reliability. We examined the application of a randomly oriented ZrN film with an extremely N-rich composition as a diffusion barrier, on which a highly oriented Cu(111) film will be obtained. This is because the good lattice matching between the ZrN(111) and Cu(111) planes is obtained by expanding the ZrN lattice due to incorporating the excess nitrogen atoms into the ZrN film. It is revealed that the Cu(111) preferred orientation (ω-FWHM value of ～5°) is realized on the randomly oriented ZrN barrier with good barrier properties. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Cu interconnect / lattice matching / Cu(111) preferential orientation / randomly oriented films / electromigration |
| Paper # | CPM2004-131 |
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| Conference Information | |
| Committee | CPM |
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| Conference Date | 2004/11/4(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Component Parts and Materials (CPM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Growth of preferentially oriented Cu(111) layer on randomly oriented ZrN barrier in Cu/ZrN/Si contact |
| Sub Title (in English) | |
| Keyword(1) | Cu interconnect |
| Keyword(2) | lattice matching |
| Keyword(3) | Cu(111) preferential orientation |
| Keyword(4) | randomly oriented films |
| Keyword(5) | electromigration |
| 1st Author's Name | Masaru SATOH |
| 1st Author's Affiliation | Dept. of Electrical and Electronic Enginnering Kitami Inst. of Technol() |
| 2nd Author's Name | Mayumi B. TAKEYAMA |
| 2nd Author's Affiliation | Dept. of Electrical and Electronic Enginnering Kitami Inst. of Technol |
| 3rd Author's Name | Atsushi NOYA |
| 3rd Author's Affiliation | Dept. of Electrical and Electronic Enginnering Kitami Inst. of Technol |
| Date | 2004/11/4 |
| Paper # | CPM2004-131 |
| Volume (vol) | vol.104 |
| Number (no) | 425 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |