| Presentation | 2004/11/4 Heteroepitaxial growih of GaN and InN on a c-SiC/Si(111) templates formed by C^+-ion implantation into Si(111) Takahiro Kobayashi, Akihiro Hashimoto, Akio Yamamoto, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We demonstrate a novel process to grow a single-crystalline GaN and InN film on Si(111) substrate. The process employs a 3c-SiC interlayer formed by C^+ ion implantation into Si(111) wafer followed by the annealing at 1250℃. The C^+-ion implantation is carried out with an acceleration voltage of 180 kV at 600 ℃. After the implantation samples are annealed in O_2 atmosphere at 1000-1250 ℃ for 2 hours. Layers of SiO_2. Si and polycrystalline c-SiC are successively removed and a single-crystalline c-SiC layer is exposed successfully on the surface. MOVPE growth of GaN and InN layer is performed at 1000℃ and 600℃, respectively, on a c-SiC/Si(111) template with a low-temperature(550℃) GaN buffer. Grown layers are confirmed to be single-crystalline from the RHEED patterns. Crystalline quality, surface morphology, electrical and optical properties, and residual stress for epitaxial films on the SiC/Si templates are evaluated and compared with those for films grown on sapphire (0001) substrates. Both crystalline quality and electrical and optical properties for these films are inferior compared with those for films grown on a nitrided sapphire substrate. A small residual stress in a GaN film grown on the SiC/Si template indicates that the process shown here is promising for GaN growth on Si. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | GaN / InN / MOVPE / Si / SiC / residual stress |
| Paper # | CPM2004-128 |
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| Conference Information | |
| Committee | CPM |
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| Conference Date | 2004/11/4(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
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| Paper Information | |
| Registration To | Component Parts and Materials (CPM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Heteroepitaxial growih of GaN and InN on a c-SiC/Si(111) templates formed by C^+-ion implantation into Si(111) |
| Sub Title (in English) | |
| Keyword(1) | GaN |
| Keyword(2) | InN |
| Keyword(3) | MOVPE |
| Keyword(4) | Si |
| Keyword(5) | SiC |
| Keyword(6) | residual stress |
| 1st Author's Name | Takahiro Kobayashi |
| 1st Author's Affiliation | Department of Electrical and Electronics Eng., Faculty of Engineering, University of Fukui() |
| 2nd Author's Name | Akihiro Hashimoto |
| 2nd Author's Affiliation | Department of Electrical and Electronics Eng., Faculty of Engineering, University of Fukui |
| 3rd Author's Name | Akio Yamamoto |
| 3rd Author's Affiliation | Department of Electrical and Electronics Eng., Faculty of Engineering, University of Fukui |
| Date | 2004/11/4 |
| Paper # | CPM2004-128 |
| Volume (vol) | vol.104 |
| Number (no) | 425 |
| Page | pp.pp.- |
| #Pages | 5 |
| Date of Issue | |