| Presentation | 2004/11/4 Low temperature growth of (110)-orientated SiC films by triode plasma CVD method Ryuichi TSURUMA, Kantarou MORIMOTO, Yuzuru NARITA, Kanji YASUI, Tadashi AKAHANE, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Silicon carbide crystalline films were grown on thermal oxide layer (SiO_2) on Si substrates and sputtered SiO_2 layer on stainless steel substrates by triode plasma chemical vapor deposition method using monomethylsilane (MMS) and dimehylsilane (DMS) diluted with hydrogen as source gases. Under a negative grid bias condition, (110) orieted SiC crystal films were grown on SiO_2/Si substrates at 600[℃] using MMS. Electrical properties of the (110) oriented SiC films such as resistivity, carrier concentration and hall mobility were measured using van der Pauw method. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | silicon carbide / triode plasma CVD / monomethylsilane / dimehylsilane |
| Paper # | CPM2004-127 |
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| Conference Information | |
| Committee | CPM |
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| Conference Date | 2004/11/4(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Component Parts and Materials (CPM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Low temperature growth of (110)-orientated SiC films by triode plasma CVD method |
| Sub Title (in English) | |
| Keyword(1) | silicon carbide |
| Keyword(2) | triode plasma CVD |
| Keyword(3) | monomethylsilane |
| Keyword(4) | dimehylsilane |
| 1st Author's Name | Ryuichi TSURUMA |
| 1st Author's Affiliation | Department of Electrical Engineering, Nagaoka University of Technology() |
| 2nd Author's Name | Kantarou MORIMOTO |
| 2nd Author's Affiliation | Department of Electrical Engineering, Nagaoka University of Technology |
| 3rd Author's Name | Yuzuru NARITA |
| 3rd Author's Affiliation | Department of Electrical Engineering, Nagaoka University of Technology |
| 4th Author's Name | Kanji YASUI |
| 4th Author's Affiliation | Department of Electrical Engineering, Nagaoka University of Technology |
| 5th Author's Name | Tadashi AKAHANE |
| 5th Author's Affiliation | Department of Electrical Engineering, Nagaoka University of Technology |
| Date | 2004/11/4 |
| Paper # | CPM2004-127 |
| Volume (vol) | vol.104 |
| Number (no) | 425 |
| Page | pp.pp.- |
| #Pages | 5 |
| Date of Issue | |