Presentation 2004/11/4
Low temperature growth of (110)-orientated SiC films by triode plasma CVD method
Ryuichi TSURUMA, Kantarou MORIMOTO, Yuzuru NARITA, Kanji YASUI, Tadashi AKAHANE,
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Abstract(in English) Silicon carbide crystalline films were grown on thermal oxide layer (SiO_2) on Si substrates and sputtered SiO_2 layer on stainless steel substrates by triode plasma chemical vapor deposition method using monomethylsilane (MMS) and dimehylsilane (DMS) diluted with hydrogen as source gases. Under a negative grid bias condition, (110) orieted SiC crystal films were grown on SiO_2/Si substrates at 600[℃] using MMS. Electrical properties of the (110) oriented SiC films such as resistivity, carrier concentration and hall mobility were measured using van der Pauw method.
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Keyword(in English) silicon carbide / triode plasma CVD / monomethylsilane / dimehylsilane
Paper # CPM2004-127
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Committee CPM
Conference Date 2004/11/4(1days)
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Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Low temperature growth of (110)-orientated SiC films by triode plasma CVD method
Sub Title (in English)
Keyword(1) silicon carbide
Keyword(2) triode plasma CVD
Keyword(3) monomethylsilane
Keyword(4) dimehylsilane
1st Author's Name Ryuichi TSURUMA
1st Author's Affiliation Department of Electrical Engineering, Nagaoka University of Technology()
2nd Author's Name Kantarou MORIMOTO
2nd Author's Affiliation Department of Electrical Engineering, Nagaoka University of Technology
3rd Author's Name Yuzuru NARITA
3rd Author's Affiliation Department of Electrical Engineering, Nagaoka University of Technology
4th Author's Name Kanji YASUI
4th Author's Affiliation Department of Electrical Engineering, Nagaoka University of Technology
5th Author's Name Tadashi AKAHANE
5th Author's Affiliation Department of Electrical Engineering, Nagaoka University of Technology
Date 2004/11/4
Paper # CPM2004-127
Volume (vol) vol.104
Number (no) 425
Page pp.pp.-
#Pages 5
Date of Issue