| Presentation | 2004/10/15 GaN-based UV/blue electroluminescent devices deposited on Si at low temperature Y AOKI, T HONDA, F HASEGAWA, H KAWANISHI, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Gallium-nitride (GaN) layers were grown on (111)Si substrates at 450 ℃ by compound source molecular beam epitaxy (CS-MBE). Streaky reflection high-energy electron diffraction (RHEED) patterns of the GaN layers at RT were observed after the growth. X-ray diffraction peak was observed. The results indicate the crystal growth of a hexagonal GaN on a Si substrate and the effectiveness of CS-MBE in the fabrication of GaN layers at low temperature. GaN-based electroluminescent devices (ELDs) using CS-MBE were fabricated on the Si substrates. Purplish blue emission was observed from the ELDs under the AC operation. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | GaN / Electroluminescent Devices / Nitride semiconductors / Low temperature growth |
| Paper # | ED2004-151,CPM2004-125,LQE2004-89 |
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| Conference Information | |
| Committee | CPM |
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| Conference Date | 2004/10/15(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
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| Vice Chair | |
| Secretary | |
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| Paper Information | |
| Registration To | Component Parts and Materials (CPM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | GaN-based UV/blue electroluminescent devices deposited on Si at low temperature |
| Sub Title (in English) | |
| Keyword(1) | GaN |
| Keyword(2) | Electroluminescent Devices |
| Keyword(3) | Nitride semiconductors |
| Keyword(4) | Low temperature growth |
| 1st Author's Name | Y AOKI |
| 1st Author's Affiliation | Department of Engineering, Kogakum University() |
| 2nd Author's Name | T HONDA |
| 2nd Author's Affiliation | Department of Engineering, Kogakum University |
| 3rd Author's Name | F HASEGAWA |
| 3rd Author's Affiliation | Department of Engineering, Kogakum University |
| 4th Author's Name | H KAWANISHI |
| 4th Author's Affiliation | Department of Engineering, Kogakum University |
| Date | 2004/10/15 |
| Paper # | ED2004-151,CPM2004-125,LQE2004-89 |
| Volume (vol) | vol.104 |
| Number (no) | 360 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |