Presentation 2004/10/15
Epitaxial Growth of InGaN Double Heterostructures for Optical Communication by RF-MBE
Tatsuo OHASHI, Tetsuya KOUNO, Shunsuke ISHIZAWA, Akihiko KIKUCHI, Katsumi KISHINO,
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Abstract(in English) Recently, the fundamental bandgap of InN was reported to be 0.65-0.8 eV, contrary to the previous knowledge of 1.9 eV, due to the improvement of crystal quality of InN filmes. Therfore InN will be a new material for the optical communication devices. In this study, In-rich InGaN films and double-heterostructures were grown by rf-plasma assisted molecular beam epitaxy (RE-MBE). The photoluminescence emission from well layer was observed at 1.45 μm. Furthermore, for modeling the InN-system optical waveguides, the refractive indices of InN, GaN and AlN were measured in the wavelengths range from 1.8 to 2.5 μm. The refractive indices for InN at the IR region were evaluated to be 2.7~2.55.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) InN / InGaN / Molecular Beam Epitaxy / double- heterostructufes / refractive index
Paper # ED2004-140,CPM2004-114,LQE2004-78
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Committee CPM
Conference Date 2004/10/15(1days)
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Registration To Component Parts and Materials (CPM)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Epitaxial Growth of InGaN Double Heterostructures for Optical Communication by RF-MBE
Sub Title (in English)
Keyword(1) InN
Keyword(2) InGaN
Keyword(3) Molecular Beam Epitaxy
Keyword(4) double- heterostructufes
Keyword(5) refractive index
1st Author's Name Tatsuo OHASHI
1st Author's Affiliation Faculty of Science and Technology, Sophia University()
2nd Author's Name Tetsuya KOUNO
2nd Author's Affiliation Faculty of Science and Technology, Sophia University
3rd Author's Name Shunsuke ISHIZAWA
3rd Author's Affiliation Faculty of Science and Technology, Sophia University
4th Author's Name Akihiko KIKUCHI
4th Author's Affiliation Faculty of Science and Technology, Sophia University
5th Author's Name Katsumi KISHINO
5th Author's Affiliation Faculty of Science and Technology, Sophia University
Date 2004/10/15
Paper # ED2004-140,CPM2004-114,LQE2004-78
Volume (vol) vol.104
Number (no) 360
Page pp.pp.-
#Pages 5
Date of Issue